PartNumber | RN2101,LF(CT | RN2101MFV,L3F | RN2101MFV(TPL3) |
Description | Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor | Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 4.7kohm | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | Y |
Series | RN2101CT | RN2101MFV | RN2101MFV |
Packaging | Reel | Reel | Reel |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 3000 | 8000 | 8000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000085 oz | 0.000053 oz | - |
Configuration | - | Single | Single |
Transistor Polarity | - | PNP | PNP |
Typical Input Resistor | - | 4.7 kOhms | 4.7 kOhms |
Typical Resistor Ratio | - | 1 | 1 |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | SOT-723-3 | - |
DC Collector/Base Gain hfe Min | - | 30 | 30 |
Maximum Operating Frequency | - | 250 MHz | - |
Collector Emitter Voltage VCEO Max | - | - 50 V | 50 V |
Continuous Collector Current | - | - 100 mA | - 100 mA |
Peak DC Collector Current | - | - 100 mA | 100 mA |
Pd Power Dissipation | - | 150 mW | 150 mW |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Emitter Base Voltage VEBO | - | - 10 V | - |
Channel Mode | - | Enhancement | - |
Maximum DC Collector Current | - | - 100 mA | - |
DC Current Gain hFE Max | - | - | 30 |