RN2101MFV(TPL3)

Mfr. #:: RN2101MFV(TPL3)
Manufacturer:: Toshiba
Description:: Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms
Lifecycle:: New from this manufacturer.
Datasheet:: RN2101MFV(TPL3) Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: Bipolar Transistors - Pre-Biased

RoHS:: Y

Configuration:: Single

Transistor Polarity:: PNP

Typical Input Resistor:: 4.7 kOhms

Typical Resistor Ratio:: 1

Mounting Style:: SMD/SMT

DC Collector/Base Gain hfe Min:: 30

Collector- Emitter Voltage VCEO Max:: 50 V

Continuous Collector Current:: - 100 mA

Peak DC Collector Current:: 100 mA

Pd - Power Dissipation:: 150 mW

Maximum Operating Temperature:: + 150 C

Series:: RN2101MFV

Packaging:: Reel

DC Current Gain hFE Max:: 30

Brand:: Toshiba

Product Type:: BJTs - Bipolar Transistors - Pre-Biased

Factory Pack Quantity:: 8000

Subcategory:: Transistors

Tags: RN2101M, RN2101, RN210, RN21, RN2

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RN2101MFV(TPL3) Description

***et: Trans Digital BJT PNP 50V 100mA 3-Pin VESM T/R

***i-Key: TRANS PREBIAS PNP 150MW VESM

***S: French Electronic Distributor since 1988

***ical: Trans Digital BJT PNP 50V 100mA 3-Pin VMT T/R

***ukat: PNP-Dig. 50V 0,1A 0,15W SOT723

***nell: DIGITAL TRANSISTOR, -0.1A, SOT-723; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 4.7kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-723; No. of Pins: 3 Pin; Product Range: DTA143E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: DTC143TM Series 50 V 100 mA Surface Mount PNP Digital Transistor - SC-105AA

***et: Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R

***nell: TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF

***ark: TRANSISTOR;DIGITAL;VMT3:NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:5mA; Voltage, Vce Sat Max:300mV; Power Dissipation:150mW; Min Hfe:100; ft,;RoHS Compliant: Yes

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

***ical: Trans Digital BJT PNP 50V 100mA 3-Pin VMT T/R

***ment14 APAC: DIGITAL Transistor, -0.1A, SOT-723; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Current

***nell: DIGITAL TRANSISTOR, -0.1A, SOT-723; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-723; No. of Pins: 3 Pin; Product Range: DTA114Y Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et: X34 Pb-F VESM TRANSISTOR Pd 150mW F 1Mhz (LF)

***i-Key: TRANS PREBIAS PNP 150MW VESM

***et: Trans Digital BJT PNP 50V 100mA 3-Pin VESM T/R

***i-Key: TRANS PREBIAS PNP 50V 0.1A VESM

***el Nordic: Contact for details

***et: Trans Digital BJT PNP 50V 100mA 3-Pin VESM T/R

***i-Key: TRANS PREBIAS PNP 50V 0.1A VESM

***el Electronic: IC OPAMP GP 140KHZ RRO 14TSSOP

Market price

Part #	Mfg.	Description	Stock	Price
RN2101MFV(TPL3) DISTI # RN2101MFV(TPL3)	Toshiba America Electronic Components	Trans Digital BJT PNP 50V 100mA 3-Pin VESM T/R - Tape and Reel (Alt: RN2101MFV(TPL3)) RoHS: Compliant Min Qty: 8000 Container: Reel	Americas - 0
RN2101MFV(TPL3) DISTI # 757-RN2101MFV(TPL3)	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms RoHS: Compliant	0

Image	Part #	Description
	Mfr.#: RN2101MFV,L3F OMO.#: OMO-RN2101MFV-L3F	Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 4.7kohm
	Mfr.#: RN2101MFV(TPL3) OMO.#: OMO-RN2101MFV-TPL3-	Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms
	Mfr.#: RN2101MFV(TPL3) OMO.#: OMO-RN2101MFV-TPL3--123	Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms
	Mfr.#: RN2101MFVL3XGF OMO.#: OMO-RN2101MFVL3XGF-1190	New and Original
	Mfr.#: RN2101MFV(TL3PAV) OMO.#: OMO-RN2101MFV-TL3PAV--1190	New and Original

RN2101MFV(TPL3)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes