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| PartNumber | RN2101MFV,L3F | RN2101MFV(TPL3) | RN2101MFV(TL3PAV) |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 4.7kohm | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | Y | - |
| Configuration | Single | Single | - |
| Transistor Polarity | PNP | PNP | - |
| Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | - |
| Typical Resistor Ratio | 1 | 1 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-723-3 | - | - |
| DC Collector/Base Gain hfe Min | 30 | 30 | - |
| Maximum Operating Frequency | 250 MHz | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | 50 V | - |
| Continuous Collector Current | - 100 mA | - 100 mA | - |
| Peak DC Collector Current | - 100 mA | 100 mA | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN2101MFV | RN2101MFV | - |
| Packaging | Reel | Reel | - |
| Emitter Base Voltage VEBO | - 10 V | - | - |
| Brand | Toshiba | Toshiba | - |
| Channel Mode | Enhancement | - | - |
| Maximum DC Collector Current | - 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000053 oz | - | - |
| DC Current Gain hFE Max | - | 30 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
RN2101MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 4.7kohm | |
| RN2101MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms | ||
| RN2101MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms | ||
| RN2101MFVL3XGF | New and Original | ||
| RN2101MFV(TL3PAV) | New and Original |