RN2105M

RN2105MFV,L3F vs RN2105MFV(TPL3) vs RN2105MFV

 
PartNumberRN2105MFV,L3FRN2105MFV(TPL3)RN2105MFV
DescriptionBipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 2.2kohmBipolar Transistors - Pre-Biased 100mA -50volts 3Pin 2.2K x 47Kohms
ManufacturerToshibaToshiba-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYY-
ConfigurationSingleSingle-
Transistor PolarityPNPPNP-
Typical Input Resistor2.2 kOhms2.2 kOhms-
Typical Resistor Ratio0.04680.047-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-723-3--
DC Collector/Base Gain hfe Min8080-
Maximum Operating Frequency250 MHz--
Collector Emitter Voltage VCEO Max- 50 V50 V-
Continuous Collector Current- 100 mA- 100 mA-
Peak DC Collector Current- 100 mA100 mA-
Pd Power Dissipation150 mW150 mW-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesRN2105MFVRN2105MFV-
PackagingReelReel-
Emitter Base Voltage VEBO- 5 V--
BrandToshibaToshiba-
Channel ModeEnhancement--
Maximum DC Collector Current- 100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity80008000-
SubcategoryTransistorsTransistors-
Unit Weight0.000053 oz--
Minimum Operating Temperature-- 55 C-
DC Current Gain hFE Max-80-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
RN2105MFV,L3F Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 2.2kohm
RN2105MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 2.2K x 47Kohms
RN2105MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 2.2K x 47Kohms
RN2105MFVL3F-ND New and Original
RN2105MFV New and Original
RN2105MFV,L3F X34 PB-F VESM TRANSISTOR PD 150M
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