PartNumber | RN2108MFV,L3F | RN2108MFV(TPL3) | RN2108MFV |
Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 22K x 47Kohms | |
Manufacturer | Toshiba | Toshiba | - |
Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | - |
RoHS | Y | - | - |
Configuration | Single | Single | - |
Transistor Polarity | PNP | PNP | - |
Typical Input Resistor | 22 kOhms, 47 kOhms | 22 kOhms | - |
Typical Resistor Ratio | 0.468 | 0.468 | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-723-3 | - | - |
DC Collector/Base Gain hfe Min | 80 | - | - |
Collector Emitter Voltage VCEO Max | - 50 V | - | - |
Continuous Collector Current | - 100 mA | - 100 mA | - |
Pd Power Dissipation | 150 mW | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | RN2108MFV | - | - |
Packaging | Reel | Reel | - |
Emitter Base Voltage VEBO | - 7 V | - | - |
Brand | Toshiba | - | - |
Number of Channels | 1 Channel | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
Factory Pack Quantity | 8000 | - | - |
Subcategory | Transistors | - | - |
Pd Power Dissipation | - | 150 mW | - |
Collector Emitter Voltage VCEO Max | - | 50 V | - |
DC Collector Base Gain hfe Min | - | 80 | - |
Peak DC Collector Current | - | 100 mA | - |