PartNumber | RN2110MFV,L3F | RN2110,LF(CT | RN2110MFV(TPL3) |
Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7Kohms |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | N |
Configuration | Single | - | Single |
Transistor Polarity | PNP | PNP | PNP |
Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | 4.7 kOhms |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-723-3 | SOT-416-3 | SOT-723 |
DC Collector/Base Gain hfe Min | 120 | 120 | 400 |
Collector Emitter Voltage VCEO Max | - 50 V | - 50 V | 50 V |
Continuous Collector Current | - 100 mA | - 100 mA | - 100 mA |
Pd Power Dissipation | 150 mW | 100 mW | 150 mW |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | RN2110 | RN2110 | RN2110 |
Packaging | Reel | Reel | Reel |
Emitter Base Voltage VEBO | - 5 V | - 5 V | - |
Brand | Toshiba | Toshiba | Toshiba |
Number of Channels | 1 Channel | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 8000 | 3000 | 8000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | - | 0.000212 oz | - |
Peak DC Collector Current | - | - | 100 mA |
DC Current Gain hFE Max | - | - | 120 |
Height | - | - | 0.5 mm |
Length | - | - | 1.2 mm |
Width | - | - | 0.8 mm |