PartNumber | RN2130MFV,L3F | RN2131MFV(TL3,T) | RN2130MFV(TPL3) |
Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased Bias Resistor PNP 100kohm -100mA -50V | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 100Kohmsx100Kohms |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | N |
Configuration | Single | - | Single |
Transistor Polarity | PNP | - | PNP |
Typical Input Resistor | 100 kOhms | - | 100 kOhms |
Typical Resistor Ratio | 1 | - | 1 |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-723-3 | - | SOT-723 |
DC Collector/Base Gain hfe Min | 100 | - | 100 |
Collector Emitter Voltage VCEO Max | - 50 V | - | - 50 V |
Continuous Collector Current | - 100 mA | - | - 100 mA |
Pd Power Dissipation | 150 mW | - | 150 mW |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | RN2130 | RN2131 | RN2130 |
Packaging | Reel | Reel | Reel |
Emitter Base Voltage VEBO | - 10 V | - | - 10 V |
Brand | Toshiba | Toshiba | Toshiba |
Number of Channels | 1 Channel | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 8000 | 8000 | 8000 |
Subcategory | Transistors | Transistors | Transistors |
Peak DC Collector Current | - | - | 100 mA |
Minimum Operating Temperature | - | - | - 65 C |
Collector Base Voltage VCBO | - | - | - 50 V |
DC Current Gain hFE Max | - | - | 100 |
Height | - | - | 0.5 mm |
Length | - | - | 1.2 mm |
Operating Temperature Range | - | - | - 65 C to + 150 C |
Type | - | - | PNP Epitaxial Silicon Transistor |
Width | - | - | 0.8 mm |