RQ3E120AT

RQ3E120ATTB vs RQ3E120AT vs RQ3E120AT-TB

 
PartNumberRQ3E120ATTBRQ3E120ATRQ3E120AT-TB
DescriptionMOSFET PCH -30V -12A MIDDLE POWER
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSMT-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage39 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance61 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge62 nC--
Pd Power Dissipation2 W--
ConfigurationSingle--
PackagingReel--
Height0.85 mm--
Length3 mm--
Transistor Type1 P-Channel--
Width2.4 mm--
BrandROHM Semiconductor--
Fall Time95 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time140 ns--
Typical Turn On Delay Time20 ns--
Part # AliasesRQ3E120AT--
Manufacturer Part # Description RFQ
ROHM Semiconductor
ROHM Semiconductor
RQ3E120ATTB MOSFET PCH -30V -12A MIDDLE POWER
RQ3E120ATTB MOSFET P-CH 30V 12A HSMT8
RQ3E120AT New and Original
RQ3E120AT-TB New and Original
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