SBC847BP

SBC847BPDXV6T1G vs SBC847BPDW1T1G vs SBC847BPDW1T3G

 
PartNumberSBC847BPDXV6T1GSBC847BPDW1T1GSBC847BPDW1T3G
DescriptionBipolar Transistors - BJT SS SOT563 GP XSTR PNP 40VBipolar Transistors - BJT SS GP XSTR DUAL 45VBipolar Transistors - BJT SS SC88 GP XSTR DUAL 45V
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-563-6SOT-363-6SOT-363-6
Transistor PolarityNPNNPN, PNPNPN, PNP
ConfigurationDualDualDual
Collector Emitter Voltage VCEO Max- 45 V, 45 V45 V45 V
Collector Base Voltage VCBO50 V50 V50 V
Emitter Base Voltage VEBO-5 V, 6 V6 V, - 5 V6 V, - 5 V
Collector Emitter Saturation Voltage250 mV0.6 V, - 0.65 V0.6 V
Maximum DC Collector Current15 nA-100 mA
Gain Bandwidth Product fT100 MHz100 MHz100 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesBC847BPDXV6BC847BPBC847BP
DC Current Gain hFE Max475-450 at 2 mA, 5 V
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
Continuous Collector Current100 mA0.1 A-
DC Collector/Base Gain hfe Min200-200 at 2 mA, 5 V
Pd Power Dissipation357 mW, 500 mW380 mW380 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101AEC-Q101AEC-Q101
Factory Pack Quantity4000300010000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.000106 oz0.000265 oz0.000265 oz
Manufacturer Part # Description RFQ
SBC847BPDXV6T1G Bipolar Transistors - BJT SS SOT563 GP XSTR PNP 40V
SBC847BPDW1T1G Bipolar Transistors - BJT SS GP XSTR DUAL 45V
SBC847BPDW1T3G Bipolar Transistors - BJT SS SC88 GP XSTR DUAL 45V
ON Semiconductor
ON Semiconductor
SBC847BPDXV6T1G Bipolar Transistors - BJT SS SOT563 GP XSTR PNP 40V
SBC847BPDW1T3G Bipolar Transistors - BJT SS SC88 GP XSTR DUAL 45V
SBC847BPDW1T1G Bipolar Transistors - BJT SS GP XSTR DUAL 45V
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