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SBC857B

SBC857BDW1T1G vs SBC857BLT1G vs SBC857BWT1G

 
PartNumberSBC857BDW1T1GSBC857BLT1GSBC857BWT1G
DescriptionBipolar Transistors - BJT SS GP XSTR PNP 45Bipolar Transistors - BJT SS GP XSTR PNP 45VBipolar Transistors - BJT SS GP XSTR PNP 45V
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-363-6SOT-23-3SOT-323-3
Transistor PolarityPNPPNPPNP
ConfigurationDualSingleSingle
Collector Emitter Voltage VCEO Max- 45 V- 45 V- 45 V
Collector Base Voltage VCBO- 50 V- 50 V- 50 V
Emitter Base Voltage VEBO- 5 V- 5 V- 5 V
Collector Emitter Saturation Voltage- 0.65 V- 300 mV- 300 mV
Maximum DC Collector Current- 100 mA- 200 mA- 100 mA
Gain Bandwidth Product fT100 MHz100 MHz100 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesBC857BDW1BC857BLBC857BW
DC Current Gain hFE Max475 at - 2 mA, - 5 V475 at - 2 mA, - 5 V-
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
DC Collector/Base Gain hfe Min220 at - 2 mA, - 5 V220 at - 2 mA, - 5 V-
Pd Power Dissipation380 mW225 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101AEC-Q101AEC-Q101
Factory Pack Quantity300030003000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.000265 oz0.000282 oz0.000176 oz
Technology-Si-
Continuous Collector Current-- 100 mA-
Manufacturer Part # Description RFQ
SBC857BDW1T1G Bipolar Transistors - BJT SS GP XSTR PNP 45
SBC857BLT1G Bipolar Transistors - BJT SS GP XSTR PNP 45V
SBC857BWT1G Bipolar Transistors - BJT SS GP XSTR PNP 45V
ON Semiconductor
ON Semiconductor 		SBC857BWT1G Bipolar Transistors - BJT SS GP XSTR PNP 45V
SBC857BLT1G Bipolar Transistors - BJT SS GP XSTR PNP 45V
SBC857BDW1T1G Bipolar Transistors - BJT SS GP XSTR PNP 45
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