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SEMIX2

SEMIX201GD128DS vs SEMIX202GB066HD vs SEMIX202GB066HDS

 
PartNumberSEMIX201GD128DSSEMIX202GB066HDSEMIX202GB066HDS
DescriptionIGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
Manufacturer Part # Description RFQ
SEMIX201GD128DS New and Original
SEMIX202GB066HD New and Original
SEMIX202GB066HDS IGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
SEMIX202GB128D New and Original
SEMIX202GB128DS New and Original
SEMIX202GB12E4S New and Original
SEMIX202GB12T4S New and Original
SEMIX202GB12V4S New and Original
SEMIX202GB12VS IGBT, MODULE, 1.2KV, 310A, Transistor Polarity:Dual NPN, DC Collector Current:310A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:
SEMIX223GD12E4C New and Original
SEMIX241DH16S THYRISTOR DIODE MODULE 300A, 1.6KV, SCR Module Type:Bridge Rectifier, Three Phase - SCR / Diode, Peak Repetitive Off-State Voltage, Vdrm:1.6kV, Gate Trigger Current Max, Igt:150mA, Current It av:2
SEMIX241MD008S New and Original
SEMIX251GD126HDS IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX252GB126HD New and Original
SEMIX252GB126HDS IGBT MODULE, DUAL, 1.2KV, 242A, Transistor Polarity:Dual NPN, DC Collector Current:242A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
SEMIX253GB126HD New and Original
SEMIX253GD126HDC New and Original
SEMIX291D16S New and Original
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