 |  | | |
| PartNumber | SI2319DDS-T1-GE3 | SI2319DS | SI2319DS-1-E3 |
| Description | MOSFET -40V Vds 20V Vgs SOT-23 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 3.6 A | - | - |
| Rds On Drain Source Resistance | 75 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 12.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.7 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2319DDS-T1-GE3 | MOSFET -40V Vds 20V Vgs SOT-23 | |
| SI2319DS-T1-E3 | MOSFET 40V 3.0A 1.25W 82 mohms @ 10V | ||
| SI2319DS-T1-GE3 | MOSFET 40V 3.0A 1.25W 82mohm @ 10V | ||
| SI2319DS | New and Original | ||
| SI2319DS-1-E3 | New and Original | ||
| SI2319DS-T1 | MOSFET RECOMMENDED ALT 781-SI2319DS-T1-E3 | ||
| SI2319DS-T1-E3-CUT TAPE | New and Original | ||
Vishay |
SI2319DS-T1-E3 | MOSFET P-CH 40V 2.3A SOT23-3 | |
| SI2319DS-T1-GE3 | MOSFET P-CH 40V 2.3A SOT23-3 | ||
| SI2319DDS-T1-GE3 | MOSFET P-CHAN 40V |