 | | |
| PartNumber | SI2328DS-T1-E3 | SI2328DS-T1-GE3 |
| Description | MOSFET 100V Vds 20V Vgs SOT-23 | MOSFET 100V Vds 20V Vgs SOT-23 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.45 mm | 1.45 mm |
| Length | 2.9 mm | 2.9 mm |
| Series | SI2 | SI2 |
| Width | 1.6 mm | 1.6 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI2328DS-E3 | SI2328DS-GE3 |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 100 V |
| Id Continuous Drain Current | - | 1.15 A |
| Rds On Drain Source Resistance | - | 250 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V |
| Vgs Gate Source Voltage | - | 10 V |
| Qg Gate Charge | - | 3.3 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 0.73 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Forward Transconductance Min | - | 4 S |
| Fall Time | - | 10 ns |
| Rise Time | - | 11 ns |
| Typical Turn Off Delay Time | - | 9 ns |
| Typical Turn On Delay Time | - | 7 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2328DS-T1-E3 | MOSFET 100V Vds 20V Vgs SOT-23 | |
| SI2328DS-T1-GE3 | MOSFET 100V Vds 20V Vgs SOT-23 | ||
Vishay |
SI2328DS-T1-GE3 | MOSFET N-CH 100V 1.15A SOT-23 | |
| SI2328DS-T1-E3 | Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R | ||
| SI2328DS-T1-E3-CUT TAPE | New and Original | ||
| SI2328DS-T1-GE3-CUT TAPE | New and Original |