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| PartNumber | SI3420A-TP | SI3420-TP | SI3421DV-T1-GE3 |
| Description | MOSFET N-Channel,MOSFETS,SOT-23 Package | MOSFET N-Channel Enhancement Mode Field Effect Transistor | MOSFET -30V Vds 20V Vgs TSOP-6 |
| Manufacturer | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Packaging | Reel | Reel | Reel |
| Series | N-Ch Polarity | N-Ch Polarity | SI3 |
| Brand | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | SOT-23-3 | TSOP-6 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | - | 20 V | 30 V |
| Id Continuous Drain Current | - | 6 A | 8 A |
| Rds On Drain Source Resistance | - | 74 mOhms | 19.2 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 3 V | 1 V |
| Vgs Gate Source Voltage | - | 12 V | 10 V |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 0.35 W | 4.2 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 P-Channel |
| Forward Transconductance Min | - | 4 S | 30 S |
| Fall Time | - | 10.2 ns | 13 ns |
| Rise Time | - | 14 ns | 9 ns |
| Typical Turn Off Delay Time | - | 29 ns | 55 ns |
| Typical Turn On Delay Time | - | 5.5 ns | 7 ns |
| Qg Gate Charge | - | - | 46 nC |
| Tradename | - | - | TrenchFET |
| Unit Weight | - | - | 0.000705 oz |