SI3424BDV-T1-GE3

SI3424BDV-T1-GE3
Mfr. #:
SI3424BDV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 8.0A 2.98W 28mohm @ 10V
Lifecycle:
New from this manufacturer.
Datasheet:
SI3424BDV-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3424BDV-T1-GE3 DatasheetSI3424BDV-T1-GE3 Datasheet (P4-P6)SI3424BDV-T1-GE3 Datasheet (P7-P9)SI3424BDV-T1-GE3 Datasheet (P10-P11)
ECAD Model:
More Information:
SI3424BDV-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSOP-6
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI3
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Part # Aliases:
SI3424BDV-GE3
Unit Weight:
0.000705 oz
Tags
SI3424B, SI3424, SI342, SI34, SI3
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si3424BDV Series N-Channel 30 V 28 mOhms Surface Mount Power Mosfet - TSOP-6
***et
Trans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.1W ;RoHS Compliant: Yes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI3424BDV-T1-GE3
DISTI # V72:2272_09216619
Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.1916
  • 1000:$0.2170
  • 500:$0.2703
  • 250:$0.2977
  • 100:$0.3308
  • 25:$0.3975
  • 10:$0.4416
  • 1:$0.5288
SI3424BDV-T1-GE3
DISTI # V36:1790_09216619
Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
RoHS: Compliant
0
  • 3000000:$0.1841
  • 1500000:$0.1842
  • 300000:$0.1933
  • 30000:$0.2071
  • 3000:$0.2093
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 8A 6TSOP
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 30000:$0.1795
  • 15000:$0.1822
  • 6000:$0.1958
  • 3000:$0.2092
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 8A 6TSOP
Min Qty: 1
Container: Cut Tape (CT)
3000In Stock
  • 1000:$0.2364
  • 500:$0.3059
  • 100:$0.3893
  • 10:$0.5210
  • 1:$0.6100
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 8A 6TSOP
Min Qty: 1
Container: Digi-Reel®
3000In Stock
  • 1000:$0.2364
  • 500:$0.3059
  • 100:$0.3893
  • 10:$0.5210
  • 1:$0.6100
SI3424BDV-T1-GE3
DISTI # 31658403
Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
RoHS: Compliant
3000
  • 3000:$0.1916
  • 1000:$0.2170
  • 500:$0.2703
  • 250:$0.2977
  • 100:$0.3308
  • 34:$0.3975
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3424BDV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1731
  • 18000:$0.1779
  • 12000:$0.1829
  • 6000:$0.1907
  • 3000:$0.1965
SI3424BDV-T1-GE3
DISTI # 84R8033
Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:2.1W RoHS Compliant: Yes
RoHS: Compliant
0
    SI3424BDV-T1-GE3
    DISTI # 781-SI3424BDV-GE3
    Vishay IntertechnologiesMOSFET 30V 8.0A 2.98W 28mohm @ 10V
    RoHS: Compliant
    2945
    • 1:$0.6100
    • 10:$0.4920
    • 100:$0.3640
    • 500:$0.2970
    • 1000:$0.2310
    • 3000:$0.2090
    • 6000:$0.1950
    • 9000:$0.1820
    • 24000:$0.1760
    SI3424BDV-T1-GE3Vishay Intertechnologies 620
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      Availability
      Stock:
      Available
      On Order:
      1985
      Enter Quantity:
      Current price of SI3424BDV-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.63
      $0.63
      10
      $0.49
      $4.87
      100
      $0.36
      $36.10
      500
      $0.30
      $148.50
      1000
      $0.23
      $229.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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