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SI3424BDV-T1-GE3

P1-P3P4-P6P7-P9P10-P11
Vishay Siliconix
Si3424BDV
www.vishay.com
4
Document Number: 74623
S13-0631-Rev. E, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
10
0.1
1
0.01
100
T
J
= 150 °C
T
J
= 25 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2
1.2
1.4
1.6
1.
8
2.0
2.2
2.4
2.6
I
D
= 250 µA
T
J
- Junction Temperature (°C)
V
GS(th)
(V)
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
vs. V
GS
vs. Temperature
Single Pulse Power
0
0.01
0.02
0.03
0.04
0.05
0.06
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
02468 10
I
D
= 6.9 A
T
A
= 125 °C
T
A
= 25 °C
0
12
20
4
8
16
Power (W)
Time (s)
T
A
= 25 °C
10
-2
10
-1
1 10 100 600
Safe Operating Area, Junction-to-Ambient
0.001
0.01
0.1
1
10
100
Limited by R
DS(on)
*
T
A
= 25 °C
Single Pulse
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
I
D
- Drain Current (A)
1 ms
10 ms
100 ms
DC
1 s
10 s
0.1 1 10 100
Vishay Siliconix
Si3424BDV
Document Number: 74623
S13-0631-Rev. E, 25-Mar-13
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
Power Derating
0.0
0.8
1.6
2.4
3.2
4.0
Power
T
C
- Case Temperature (°C)
0 25 50 75 100 125 150
Vishay Siliconix
Si3424BDV
www.vishay.com
6
Document Number: 74623
S13-0631-Rev. E, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74623
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-4
10
-3
10
-2
10
-1
600100101
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 360 °C/W
3. T
JM
-
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-4
10
-3
10
-2
10
-1
101
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
P1-P3P4-P6P7-P9P10-P11

SI3424BDV-T1-GE3

Mfr. #:
Buy SI3424BDV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 8.0A 2.98W 28mohm @ 10V
Lifecycle:
New from this manufacturer.
Delivery:
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