PartNumber | SI3447CDV-T1-E3 | SI3447CDV | SI3447CDV-T1-G |
Description | MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3 | ||
Manufacturer | Vishay | - | VISHAY |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TSOP-6 | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | Reel |
Series | SI3 | - | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SI3447CDV-E3 | - | - |
Unit Weight | 0.000705 oz | - | 0.000705 oz |
Part Aliases | - | - | SI3447CDV-GE3 |
Package Case | - | - | TSOP-6 |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 P-Channel |
Pd Power Dissipation | - | - | 2 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 20 ns |
Rise Time | - | - | 40 ns |
Vgs Gate Source Voltage | - | - | 8 V |
Id Continuous Drain Current | - | - | 6.3 A |
Vds Drain Source Breakdown Voltage | - | - | - 12 V |
Vgs th Gate Source Threshold Voltage | - | - | - 1 V |
Rds On Drain Source Resistance | - | - | 36 mOhms |
Transistor Polarity | - | - | P-Channel |
Typical Turn Off Delay Time | - | - | 35 ns |
Typical Turn On Delay Time | - | - | 20 ns |
Qg Gate Charge | - | - | 20 nC |
Channel Mode | - | - | Enhancement |