SI3447C

SI3447CDV-T1-E3 vs SI3447CDV vs SI3447CDV-T1-G

 
PartNumberSI3447CDV-T1-E3SI3447CDVSI3447CDV-T1-G
DescriptionMOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3
ManufacturerVishay-VISHAY
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTSOP-6--
TradenameTrenchFET--
PackagingReel-Reel
SeriesSI3--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSI3447CDV-E3--
Unit Weight0.000705 oz-0.000705 oz
Part Aliases--SI3447CDV-GE3
Package Case--TSOP-6
Number of Channels--1 Channel
Configuration--Single
Transistor Type--1 P-Channel
Pd Power Dissipation--2 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--20 ns
Rise Time--40 ns
Vgs Gate Source Voltage--8 V
Id Continuous Drain Current--6.3 A
Vds Drain Source Breakdown Voltage--- 12 V
Vgs th Gate Source Threshold Voltage--- 1 V
Rds On Drain Source Resistance--36 mOhms
Transistor Polarity--P-Channel
Typical Turn Off Delay Time--35 ns
Typical Turn On Delay Time--20 ns
Qg Gate Charge--20 nC
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI3447CDV-T1-E3 MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3
Vishay
Vishay
SI3447CDV-T1-E3 IGBT Transistors MOSFET 12V 7.8A 3.0W 36mohm @ 4.5V
SI3447CDV-T1-GE3 MOSFET P-CH 12V 7.8A 6-TSOP
SI3447CDV New and Original
SI3447CDVT1GE3 Small Signal Field-Effect Transistor, 7.8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SI3447CDV-T1-G New and Original
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