 | | |
| PartNumber | SI3460BDV-T1-E3 | SI3460BDV-T1-GE3 |
| Description | MOSFET 20V 8.0A 3.5W | MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | TSOP-6 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 8 A | - |
| Rds On Drain Source Resistance | 27 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - |
| Vgs Gate Source Voltage | 4.5 V | - |
| Qg Gate Charge | 16 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 3.5 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.1 mm | 1.1 mm |
| Length | 3.05 mm | 3.05 mm |
| Series | SI3 | SI3 |
| Transistor Type | 1 N-Channel | - |
| Width | 1.65 mm | 1.65 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 22 S | - |
| Fall Time | 6 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 60 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | - |
| Typical Turn On Delay Time | 7 ns | - |
| Part # Aliases | SI3460BDV-E3 | SI3460BDV-GE3 |
| Unit Weight | 0.000705 oz | 0.000705 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3460BDV-T1-E3 | MOSFET 20V 8.0A 3.5W | |
| SI3460BDV-T1-GE3 | MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V | ||
Vishay |
SI3460BDV-T1-E3 | IGBT Transistors MOSFET 20V 8.0A 3.5W | |
| SI3460BDV-T1-GE3 | MOSFET N-CH 20V 8A 6-TSOP | ||
| SI3460BDV-T1-E312+ | New and Original |