SI3460BDV-T1-E3

Mfr. #:: SI3460BDV-T1-E3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 20V 8.0A 3.5W
Lifecycle:: New from this manufacturer.
Datasheet:: SI3460BDV-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI3460BDV-T1-E3 Datasheet SI3460BDV-T1-E3 Datasheet (P4-P6)SI3460BDV-T1-E3 Datasheet (P7-P9)SI3460BDV-T1-E3 Datasheet (P10-P11)
ECAD Model:
More Information:: SI3460BDV-T1-E3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TSOP-6

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 8 A

Rds On - Drain-Source Resistance:: 27 mOhms

Vgs th - Gate-Source Threshold Voltage:: 450 mV

Vgs - Gate-Source Voltage:: 4.5 V

Qg - Gate Charge:: 16 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 3.5 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.1 mm

Length:: 3.05 mm

Series:: SI3

Transistor Type:: 1 N-Channel

Width:: 1.65 mm

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 22 S

Fall Time:: 6 ns

Product Type:: MOSFET

Rise Time:: 60 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 25 ns

Typical Turn-On Delay Time:: 7 ns

Part # Aliases:: SI3460BDV-E3

Unit Weight:: 0.000705 oz

Tags: SI3460B, SI3460, SI346, SI34, SI3

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3460BDV-T1-E3 Description

***ure Electronics: Single N-Channel 20 V 0.027 Ohms Surface Mount Power Mosfet - TSOP-6

***ical: Trans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:8V; Threshold Voltage Vgs:1V; No. Of Pins:6Pins Rohs Compliant: No

***ment14 APAC: MOSFET, N, TSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):33mohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Base Number:3460; Current Id Max:8A; N-channel Gate Charge:9nC; Output Current Max:2A; P Channel Gate Charge:9nC; Package / Case:TSOP; Power Dissipation Pd:2W; Power Dissipation Pd:20mW; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

SI3460BDV-T1-E3 More Information

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI3460BDV-T1-E3 DISTI # V72:2272_09216670	Vishay Intertechnologies	Trans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R RoHS: Compliant	3143	3000:$0.3199 1000:$0.3268 500:$0.3826 250:$0.4720 100:$0.4772 25:$0.5950 10:$0.6020 1:$0.7147
SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	31388In Stock	1000:$0.4169 500:$0.5212 100:$0.7036 10:$0.9120 1:$1.0400
SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	31388In Stock	1000:$0.4169 500:$0.5212 100:$0.7036 10:$0.9120 1:$1.0400
SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	30000In Stock	3000:$0.3669
SI3460BDV-T1-E3 DISTI # 25790201	Vishay Intertechnologies	Trans MOSFET N-CH Si 20V 6.7A 6-Pin TSOP T/R RoHS: Compliant	3143	3000:$0.3199 1000:$0.3268 500:$0.3826 250:$0.4720 100:$0.4772 25:$0.5950 20:$0.6020
SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3460BDV-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 24000	3000:$0.3149 6000:$0.3059 12000:$0.2979 18000:$0.2909 30000:$0.2829
SI3460BDV-T1-E3 DISTI # SI3460BDV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3460BDV-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 25	1:$0.6159 30:$0.5769 75:$0.5009 150:$0.4599 375:$0.3999 750:$0.3439 1500:$0.3429
SI3460BDV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R - Tape and Reel RoHS: Compliant Container: Reel	Americas - 0
SI3460BDV-T1-E3 DISTI # 75M5452	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 8A, TSOP,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes	0	1:$0.9200 10:$0.7340 25:$0.6750 50:$0.6160 100:$0.5570 500:$0.4600 1000:$0.3680
SI3460BDV-T1-E3 DISTI # 85W0179	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	1:$0.3340 3000:$0.3340
SI3460BDV-T1-E3. DISTI # 16AC0254	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2W,No. of Pins:6Pins RoHS Compliant: No	24000	1:$0.3340 3000:$0.3340
SI3460BDV-T1-E3 DISTI # 70026203	Vishay Siliconix	N-CHANNEL 20-V (D-S) MOSFET RoHS: Compliant	0	3000:$0.3770 6000:$0.3570 9000:$0.3160
SI3460BDV-T1-E3	Vishay Intertechnologies	Single N-Channel 20 V 0.027 Ohms Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant	12000Reel	3000:$0.5100
SI3460BDV-T1-E3 DISTI # 781-SI3460BDV-E3	Vishay Intertechnologies	MOSFET 20V 8.0A 3.5W RoHS: Compliant	4970	1:$0.9200 10:$0.7340 100:$0.5570 500:$0.4600 1000:$0.3680 3000:$0.3340
SI3460BDV-T1-E3	VISIL		221
SI3460BDV-T1-E3	Vishay Intertechnologies	MOSFET 20V 8.0A 3.5W RoHS: Compliant	Americas - 3000
SI3460BDV-T1-E3 DISTI # C1S803601192530	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3143	250:$0.4720 100:$0.4772 25:$0.5950 10:$0.6020

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Availability

Stock:: Available
On Order:: 1987
Enter Quantity:

Current price of SI3460BDV-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.91~~; ~~$0.91~~

10: ~~$0.73~~; ~~$7.33~~

100: ~~$0.56~~; ~~$55.60~~

500: ~~$0.46~~; ~~$230.00~~

1000: ~~$0.37~~; ~~$368.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SI3460BDV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes