OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SI3460BDV-T1-E3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 74412
S09-1498-Rev. C, 10-Aug-09
Vishay Siliconix
Si3460BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
Source Current (A) -
1
100
V
SD
- Source-to-Drain Voltage (V)
I
S
0 0.2
0.4
0.6
0.8 1
10
1.2
T
J
= 150 °C
T
J
= 25 °C
0.2
0.3
0.4
0.5
0.6
0.7
0
.
8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
V
GS(th)
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.00
0.02
0.04
0.06
.
012345
e (Ω)
c
n
a
t
s i s
e
R
-
n O
R
DS(on)
-
V
- Gate-to-Source Voltage (V)
I
D
= 5.1 A
125 °C
0.01
0.03
0.05
0.07
I
D
= 5.1 A
25 °C
0
30
50
10
20
) W ( r e w o P
Time (s)
40
1 100 600 10 10
- 1
10
- 2
10
- 3
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
) A ( t n e
r r u C
n i
a
r D
- I
D
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 s
DC
1 s
100 ms
10 ms
1 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
Limited by R
DS(on)
*
Document Number: 74412
S09-1498-Rev. C, 10-Aug-09
www.vishay.com
5
Vishay Siliconix
Si3460BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
0 25 50 75 100 125 150
Foot (Drain) Temperature ( C)
)
A
(
t n e r r
u C
n i a r
D
Package Limited
Power Derating
0
1
2
3
4
25 50 75 100 125 150
Foot (Drain) Temperature ( C)
) W (
n o i t a
p
i s s i D r e
w
o P
www.vishay.com
6
Document Number: 74412
S09-1498-Rev. C, 10-Aug-09
Vishay Siliconix
Si3460BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for
Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74412
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
- 3
10
- 2
1 10 600 10
- 1
10
- 4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
e
v i t c e
f
f
E d e z
i
l a m
r
o
N t n e i s n a r T
e c n a d e p m
I
l a m r
e
h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
- 3
10
- 2
1 10 10
- 1
10
- 4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
e v i
t
c e
f
f
E d e z i l a m r o N t n e i s n a r T
e
c n a d e p m I l a m r e h T
P1-P3P4-P6P7-P9P10-P11

SI3460BDV-T1-E3

Mfr. #:
Buy SI3460BDV-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 8.0A 3.5W
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet