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Document Number: 74412
S09-1498-Rev. C, 10-Aug-09
Vishay Siliconix
Si3460BDV
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
20 V
V
DS
Temperature Coefficient
ΔV
DS
/T
J
I
D
= 250 µA
22.5
mV/°C
V
GS(th)
Temperature Coefficient
ΔV
GS(th)
/T
J
- 2.9
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.45 1.0
V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 ns
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
10
On-State Drain Current
a
I
D(on)
V
DS
≤ 5 V, V
GS
= 4.5 V
20
A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 5.1 A
0.023 0.027
Ω
V
GS
= 2.5 V, I
D
= 4.7 A
0.027 0.032
V
GS
= 1.8 V, I
D
= 2.5 A
0.033 0.040
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 5.1 A
22 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
860
pFOutput Capacitance
C
oss
110
Reverse Transfer Capacitance
C
rss
65
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 8 V, I
D
= 8 A
16 24
nC
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 8 A
9 13.5
Gate-Source Charge
Q
gs
1.4
Gate-Drain Charge
Q
gd
1.4
Gate Resistance
R
g
f = 1 MHz
3.2
Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 10 V, R
L
= 1.9 Ω
I
D
≅ 5.4 A, V
GEN
= 4.5 V, R
g
= 1 Ω
715
ns
Rise Time
t
r
60 90
Turn-Off Delay Time
t
d(off)
25 40
Fall Time
t
f
610
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 10 V, R
L
= 1.9 Ω
I
D
≅ 5.4 A, V
GEN
= 8 V, R
g
= 1 Ω
510
Rise Time
t
r
15 25
Turn-Off Delay Time
t
d(off)
25 40
Fall Time
t
f
510
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
8
A
Pulse Diode Forward Current
I
SM
20
Body Diode Voltage
V
SD
I
S
= 5.4 A, V
GS
= 0 V
0.8 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 5.4 A, dI/dt = 100 A/µs, T
J
= 25 °C
20 40 ns
Body Diode Reverse Recovery Charge
Q
rr
920nC
Reverse Recovery Fall Time
t
a
12
ns
Reverse Recovery Rise Time
t
b
8
