 | | |
| PartNumber | SI3460DV-T1-GE3 | SI3460DV-T1-E3 |
| Description | MOSFET RECOMMENDED ALT 781-SI3460DDV-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI3460DDV-T1-GE3 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | TSOP-6 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI3 | SI3 |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI3460DV-GE3 | SI3460DV-E3 |
| Unit Weight | 0.000705 oz | 0.000705 oz |
| Height | - | 1.1 mm |
| Length | - | 3.05 mm |
| Width | - | 1.65 mm |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3460DV-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI3460DDV-T1-GE3 | |
| SI3460DV-T1-E3 | MOSFET RECOMMENDED ALT 781-SI3460DDV-T1-GE3 | ||
Vishay |
SI3460DV-T1-GE3 | RF Bipolar Transistors MOSFET 20V 6.8A 2.0W 38mohm @ 1.8V | |
| SI3460DV-T1-E3 | MOSFET N-CH 20V 5.1A 6TSOP | ||
| SI3460DV-T1 | MOSFET RECOMMENDED ALT 781-SI3460BDV-E3 | ||
| SI3460DV-T1-E3 (DC200801 | New and Original | ||
| SI3460DV-T3-E3 | New and Original | ||
| SI3460DV-TI | New and Original | ||
| SI3460DVT1E3 | Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |