SI3460DV-T1-GE3

SI3460DV-T1-GE3
Mfr. #:
SI3460DV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI3460DDV-T1-GE3
Lifecycle:
New from this manufacturer.
Datasheet:
SI3460DV-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3460DV-T1-GE3 DatasheetSI3460DV-T1-GE3 Datasheet (P4-P6)SI3460DV-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSOP-6
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI3
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Part # Aliases:
SI3460DV-GE3
Unit Weight:
0.000705 oz
Tags
SI3460DV-T1, SI3460DV-T, SI3460DV, SI3460D, SI3460, SI346, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 5.1A 6-Pin TSOP T/R
*** Electronics
MOSFET 20V 6.8A 2.0W 38mohm @ 1.8V
***S
French Electronic Distributor since 1988
***ment14 APAC
N CHANNEL MOSFET, 20V, 6.8A; Transistor; N CHANNEL MOSFET, 20V, 6.8A; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:450mV
Part # Mfg. Description Stock Price
SI3460DV-T1-GE3
DISTI # SI3460DV-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 5.1A 6TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI3460DV-T1-GE3
    DISTI # 781-SI3460DV-GE3
    Vishay IntertechnologiesMOSFET 20V 6.8A 2.0W 38mohm @ 1.8V
    RoHS: Compliant
    0
      SI3460DV-T1-GE3Vishay Intertechnologies 3000
        Image Part # Description
        SI3460DV-T1-GE3

        Mfr.#: SI3460DV-T1-GE3

        OMO.#: OMO-SI3460DV-T1-GE3

        MOSFET RECOMMENDED ALT 781-SI3460DDV-T1-GE3
        SI3460DV-T1-GE3

        Mfr.#: SI3460DV-T1-GE3

        OMO.#: OMO-SI3460DV-T1-GE3-VISHAY

        RF Bipolar Transistors MOSFET 20V 6.8A 2.0W 38mohm @ 1.8V
        SI3460DDV

        Mfr.#: SI3460DDV

        OMO.#: OMO-SI3460DDV-1190

        New and Original
        SI3460DDV-T1-E3

        Mfr.#: SI3460DDV-T1-E3

        OMO.#: OMO-SI3460DDV-T1-E3-1190

        New and Original
        SI3460DDV-T1-GE3

        Mfr.#: SI3460DDV-T1-GE3

        OMO.#: OMO-SI3460DDV-T1-GE3-VISHAY

        MOSFET N-CH 20V 7.9A 6-TSOP
        SI3460DV-T1-E3

        Mfr.#: SI3460DV-T1-E3

        OMO.#: OMO-SI3460DV-T1-E3-VISHAY

        MOSFET N-CH 20V 5.1A 6TSOP
        SI3460DV-T1-E3 (DC200801

        Mfr.#: SI3460DV-T1-E3 (DC200801

        OMO.#: OMO-SI3460DV-T1-E3-DC200801-1190

        New and Original
        SI3460DV-T3-E3

        Mfr.#: SI3460DV-T3-E3

        OMO.#: OMO-SI3460DV-T3-E3-1190

        New and Original
        SI3460DV-TI

        Mfr.#: SI3460DV-TI

        OMO.#: OMO-SI3460DV-TI-1190

        New and Original
        SI3460DVT1E3

        Mfr.#: SI3460DVT1E3

        OMO.#: OMO-SI3460DVT1E3-1190

        Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        Availability
        Stock:
        Available
        On Order:
        5000
        Enter Quantity:
        Current price of SI3460DV-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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