 |  | | |
| PartNumber | SI3585CDV-T1-GE3 | SI3585CDV | SI3585CDV-T1-E3 |
| Description | MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOP-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 2.1 A, 3.9 A | - | - |
| Rds On Drain Source Resistance | 58 mOhms, 195 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 3.2 nC, 6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.3 W, 1.4 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 3.05 mm | - | - |
| Series | SI3 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Width | 1.65 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 1 S, 12 S | - | - |
| Fall Time | 9 ns, 28 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns, 37 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns, 25 ns | - | - |
| Typical Turn On Delay Time | 15 ns, 16 ns | - | - |
| Part # Aliases | SI3585CDV-GE3 | - | - |
| Unit Weight | 0.000705 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3585CDV-T1-GE3 | MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR | |
| SI3585CDV | New and Original | ||
| SI3585CDV-T1-E3 | New and Original | ||
| SI3585CDV-T1-GE3-CUT TAPE | New and Original | ||
Vishay |
SI3585CDV-T1-GE3 | Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R |