SI4401BDY-T

SI4401BDY-T1-E3 vs SI4401BDY-T1-E3-CUT TAPE vs SI4401BDY-T1

 
PartNumberSI4401BDY-T1-E3SI4401BDY-T1-E3-CUT TAPESI4401BDY-T1
DescriptionMOSFET 40V 10.5A 0.014Ohm
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Id Continuous Drain Current10.5 A--
Rds On Drain Source Resistance14 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge40 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.9 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI4--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min26 S--
Fall Time47 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time97 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesSI4401BDY-E3--
Unit Weight0.006596 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4401BDY-T1-E3 MOSFET 40V 10.5A 0.014Ohm
SI4401BDY-T1-GE3 MOSFET 40V 10.5A 2.9W 14mohm @ 10V
SI4401BDY-T1-E3-CUT TAPE New and Original
SI4401BDY-T1 New and Original
Vishay
Vishay
SI4401BDY-T1-E3 MOSFET P-CH 40V 8.7A 8-SOIC
SI4401BDY-T1-GE3 MOSFET P-CH 40V 8.7A 8-SOIC
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