PartNumber | SI4435DDY | SI4435DDY-T1 | SI4435DDY-T1-E |
Description | |||
Manufacturer | - | - | VISHAY |
Product Category | - | - | FETs - Single |
Series | - | - | SI4435DDY |
Packaging | - | - | Reel |
Part Aliases | - | - | SI4435DDY-E3 |
Unit Weight | - | - | 0.006596 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | SOIC-Narrow-8 |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 P-Channel |
Pd Power Dissipation | - | - | 2.5 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 12 ns 16 ns |
Rise Time | - | - | 8 ns 35 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 8.1 A |
Vds Drain Source Breakdown Voltage | - | - | - 30 V |
Rds On Drain Source Resistance | - | - | 24 mOhms |
Transistor Polarity | - | - | P-Channel |
Typical Turn Off Delay Time | - | - | 45 ns 40 ns |
Typical Turn On Delay Time | - | - | 10 ns 42 ns |
Channel Mode | - | - | Enhancement |