PartNumber | SI4435DDY-T1-E3 | SI4435DDY-T1-E | SI4435DDY-T1-E3 SOP8 |
Description | MOSFET -30V Vds 20V Vgs SO-8 | ||
Manufacturer | Vishay | VISHAY | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | Reel | - |
Series | SI4 | SI4435DDY | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SI4435DDY-E3 | - | - |
Unit Weight | 0.006596 oz | 0.006596 oz | - |
Part Aliases | - | SI4435DDY-E3 | - |
Mounting Style | - | SMD/SMT | - |
Package Case | - | SOIC-Narrow-8 | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 P-Channel | - |
Pd Power Dissipation | - | 2.5 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 12 ns 16 ns | - |
Rise Time | - | 8 ns 35 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 8.1 A | - |
Vds Drain Source Breakdown Voltage | - | - 30 V | - |
Rds On Drain Source Resistance | - | 24 mOhms | - |
Transistor Polarity | - | P-Channel | - |
Typical Turn Off Delay Time | - | 45 ns 40 ns | - |
Typical Turn On Delay Time | - | 10 ns 42 ns | - |
Channel Mode | - | Enhancement | - |