PartNumber | SI4505DY-T1-GE3 | SI4501BDY-T1-GE3 | SI4501ADY-T1-E3 |
Description | MOSFET 30/8.0V 7.8/5.0A 18/42mohm @ 10/4.5V | MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR | MOSFET RECOMMENDED ALT 78-SI4501BDY-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | E |
Technology | Si | Si | Si |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SI4 | SI4 | SI4 |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SI4505DY-GE3 | SI4501BDY-GE3 | SI4501ADY-E3 |
Unit Weight | 0.006596 oz | 0.019048 oz | 0.006596 oz |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | SO-8 | - |
Number of Channels | - | 2 Channel | - |
Transistor Polarity | - | N-Channel, P-Channel | - |
Vds Drain Source Breakdown Voltage | - | 30 V, 8 V | - |
Id Continuous Drain Current | - | 9.5 A, 6.4 A | - |
Rds On Drain Source Resistance | - | 17 mOhms, 27 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 800 mV, 450 mV | - |
Vgs Gate Source Voltage | - | 20 V, 8 V | - |
Qg Gate Charge | - | 25 nC, 42 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 4.5 W, 3.1 W | - |
Configuration | - | Dual | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel, 1 P-Channel | - |
Forward Transconductance Min | - | 29 S, 24 S | - |
Fall Time | - | 10 ns, 14 ns | - |
Rise Time | - | 55 ns, 18 ns | - |
Typical Turn Off Delay Time | - | 22 ns, 34 ns | - |
Typical Turn On Delay Time | - | 16 ns, 22 ns | - |