SI4501BDY-T1-GE3

Mfr. #:: SI4501BDY-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR
Lifecycle:: New from this manufacturer.
Datasheet:: SI4501BDY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V, 8 V

Id - Continuous Drain Current:: 9.5 A, 6.4 A

Rds On - Drain-Source Resistance:: 17 mOhms, 27 mOhms

Vgs th - Gate-Source Threshold Voltage:: 800 mV, 450 mV

Vgs - Gate-Source Voltage:: 20 V, 8 V

Qg - Gate Charge:: 25 nC, 42 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 4.5 W, 3.1 W

Configuration:: Dual

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Reel

Series:: SI4

Transistor Type:: 1 N-Channel, 1 P-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 29 S, 24 S

Fall Time:: 10 ns, 14 ns

Product Type:: MOSFET

Rise Time:: 55 ns, 18 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 22 ns, 34 ns

Typical Turn-On Delay Time:: 16 ns, 22 ns

Part # Aliases:: SI4501BDY-GE3

Unit Weight:: 0.019048 oz

Tags: SI4501B, SI4501, SI450, SI45, SI4

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Step2:
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SI4501BDY-T1-GE3 Description

***ied Electronics & Automation: SI4501BDY-T1-GE3 Dual N/P-channel MOSFET Transistor; 6.4 A; 12 A; 8V; 30V; 8-Pin SOIC

***ical: Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, NP CH, W/D, 30V/8V, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:4.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, N Channel:12A; Continuous Drain Current Id, P Channel:-8A; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-8V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.0135ohm; On Resistance Rds(on), P Channel:0.021ohm; Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:4.5W

Market price

Part #	Mfg.	Description	Stock	Price
SI4501BDY-T1-GE3 DISTI # V72:2272_09216524	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R RoHS: Compliant	2262	1000:$0.2460 500:$0.2753 250:$0.3234 100:$0.3345 25:$0.4116 10:$0.4133 1:$0.4862
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1756In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1756In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.2552
SI4501BDY-T1-GE3 DISTI # 30697489	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R RoHS: Compliant	2262	1000:$0.2460 500:$0.2753 250:$0.3234 100:$0.3345 29:$0.4116
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R (Alt: SI4501BDY-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.4119 10:€0.2809 25:€0.2419 50:€0.2229 100:€0.2149 500:€0.2109 1000:€0.2079
SI4501BDY-T1-GE3 DISTI # SI4501BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V/8V 12A/8A 8-Pin SO T/R - Tape and Reel (Alt: SI4501BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2319 5000:$0.2249 10000:$0.2159 15000:$0.2099 25000:$0.2049
SI4501BDY-T1-GE3 DISTI # 67X6866	Vishay Intertechnologies	MOSFET Transistor, N and P Channel, 12 A, 30 V, 0.0135 ohm, 10 V, 800 mV	0	1:$0.2760 2500:$0.2630 5000:$0.2450 7500:$0.2280
SI4501BDY-T1-GE3 DISTI # 70616179	Vishay Siliconix	SI4501BDY-T1-GE3 Dual N/P-channel MOSFET Transistor,6.4 A,12 A,8V,30V,8-Pin SOIC RoHS: Compliant	0	100:$0.4700 500:$0.4200 1500:$0.3700 2500:$0.3400
SI4501BDY-T1-GE3 DISTI # 78-SI4501BDY-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR RoHS: Compliant	1545	1:$0.6400 10:$0.5110 100:$0.3880 500:$0.3200 1000:$0.2680 2500:$0.2670
SI4501BDY-T1-GE3 DISTI # 8123227P	Vishay Intertechnologies	TRANS MOSFET N/P-CH 30V/8V 9A/6.4A, RL	1680	100:£0.3060 500:£0.2520 1500:£0.2140 2500:£0.2090
SI4501BDY-T1-GE3	Vishay Intertechnologies	MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR	Americas -
SI4501BDY-T1-GE3 DISTI # C1S803605378402	Vishay Intertechnologies	MOSFETs	2262	250:$0.3234 100:$0.3345 25:$0.4116 10:$0.4134
SI4501BDY-T1-GE3 DISTI # 2056722	Vishay Intertechnologies	MOSFET, NP CH, W/D, 30V/8V, SO8 RoHS: Compliant	0	5:£0.4470 25:£0.3870 100:£0.3270 250:£0.2980 500:£0.2690

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On Order:: 1988
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SI4501BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes