 |  | | |
| PartNumber | SI4554DY-T1-GE3 | SI4554DY | SI4554DY-T1-E3 |
| Description | MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR | ||
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms, 27 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V, 1.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 13.3 nC, 41.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.1 W, 3.2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI4 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 25 S, 27 S | - | - |
| Fall Time | 7 ns, 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns, 10 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns, 50 ns | - | - |
| Typical Turn On Delay Time | 5 ns, 10 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4559ADY-T1-GE3 | MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR | |
| SI4559ADY-T1-E3 | MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR | ||
| SI4554DY-T1-GE3 | MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR | ||
| SI4559ADY-T1-E3-CUT TAPE | New and Original | ||
| SI4559ADY-T1-GE3-CUT TAPE | New and Original | ||
| SI4554DY | New and Original | ||
| SI4554DY-T1-E3 | New and Original | ||
| SI4558DY | MOSFET RECOMMENDED ALT 781-SI4599DY-T1-GE3 | ||
| SI4558DY-T1 | New and Original | ||
| SI4558DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4599DY-T1-GE3 | ||
| SI4559 | New and Original | ||
| SI4559ADY | New and Original | ||
| SI4559ADY(4559A) | New and Original | ||
| SI4559ADY-GE3 | New and Original | ||
| SI4559ADY-T1-E3 GE3 | New and Original | ||
| SI4559ADY-T1-E3. | New and Original | ||
| SI4559ADY-T1-E3CT-ND | New and Original | ||
| SI4559DY | New and Original | ||
| SI4559DY-T1-E3 | New and Original | ||
| SI4559DY-T1-GE3 | New and Original | ||
| SI4559EY | MOSFET 60V 4.5/3.1A | ||
| SI4559EY-T1 | MOSFET 60V 4.5/3.1A | ||
| SI4559EY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4559ADY-T1-GE3 | ||
| SI4559EY-T1-GE3 | New and Original | ||
| SI4559EY-TI | New and Original | ||
| SI4559EYT1E3 | Power Field-Effect Transistor, 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | ||
Vishay |
SI4554DY-T1-GE3 | MOSFET N/P-CH 40V 8A 8SO | |
| SI4559ADY-T1-E3 | MOSFET N/P-CH 60V 5.3A 8-SOIC | ||
| SI4559ADY-T1-GE3 | MOSFET N/P-CH 60V 5.3A 8-SOIC |