PartNumber | SI4590DY-T1-GE3 | SI4599DY-T1-GE3 |
Description | MOSFET -100V Vds 20V Vgs SO-8 N&P PAIR | MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | Y | E |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 |
Number of Channels | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 40 V |
Id Continuous Drain Current | 5.6 A, 3.4 A | 5.8 A, 6.8 A |
Rds On Drain Source Resistance | 57 mOhms, 183 mOhms | 35.5 mOhms, 45 mOhms |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1.2 V, 1.4 V |
Vgs Gate Source Voltage | 20 V | 10 V |
Qg Gate Charge | 11.5 nC, 36 nC | 11.7 nC, 25 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 3.6 W, 4.2 W | 3 W, 3.1 W |
Configuration | Dual | Dual |
Channel Mode | Enhancement | Enhancement |
Tradename | TrenchFET | TrenchFET |
Packaging | Reel | Reel |
Series | SI4 | SI4 |
Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 9 S, 9.3 S | 14 S, 22 S |
Fall Time | 12 ns, 25 ns | 9 ns, 9 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 73 ns, 80 ns | 10 ns, 12 ns |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 14 ns, 42 ns | 15 ns, 30 ns |
Typical Turn On Delay Time | 32 ns, 55 ns | 7 ns, 7 ns |
Unit Weight | 0.017870 oz | 0.019048 oz |
Height | - | 1.75 mm |
Length | - | 4.9 mm |
Width | - | 3.9 mm |
Part # Aliases | - | SI4599DY-GE3 |