SI459

SI4590DY-T1-GE3 vs SI4599DY-T1-GE3

 
PartNumberSI4590DY-T1-GE3SI4599DY-T1-GE3
DescriptionMOSFET -100V Vds 20V Vgs SO-8 N&P PAIRMOSFET -40V Vds 20V Vgs SO-8 N&P PAIR
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSYE
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSO-8SO-8
Number of Channels2 Channel2 Channel
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel
Vds Drain Source Breakdown Voltage100 V40 V
Id Continuous Drain Current5.6 A, 3.4 A5.8 A, 6.8 A
Rds On Drain Source Resistance57 mOhms, 183 mOhms35.5 mOhms, 45 mOhms
Vgs th Gate Source Threshold Voltage1.5 V1.2 V, 1.4 V
Vgs Gate Source Voltage20 V10 V
Qg Gate Charge11.5 nC, 36 nC11.7 nC, 25 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation3.6 W, 4.2 W3 W, 3.1 W
ConfigurationDualDual
Channel ModeEnhancementEnhancement
TradenameTrenchFETTrenchFET
PackagingReelReel
SeriesSI4SI4
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel, 1 P-Channel
BrandVishay / SiliconixVishay / Siliconix
Forward Transconductance Min9 S, 9.3 S14 S, 22 S
Fall Time12 ns, 25 ns9 ns, 9 ns
Product TypeMOSFETMOSFET
Rise Time73 ns, 80 ns10 ns, 12 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time14 ns, 42 ns15 ns, 30 ns
Typical Turn On Delay Time32 ns, 55 ns7 ns, 7 ns
Unit Weight0.017870 oz0.019048 oz
Height-1.75 mm
Length-4.9 mm
Width-3.9 mm
Part # Aliases-SI4599DY-GE3
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4590DY-T1-GE3 MOSFET -100V Vds 20V Vgs SO-8 N&P PAIR
SI4599DY-T1-GE3 MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR
Vishay
Vishay
SI4590DY-T1-GE3 MOSFET N/P CHAN 100V SO8 DUAL
SI4599DY-T1-GE3 MOSFET N/P-CH 40V 6.8A 8SOIC
SI4599DY-T1-GE3-CUT TAPE New and Original
SI4590DY-T1 New and Original
SI4599DY New and Original
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