 | | |
| PartNumber | SI4904DY-T1-GE3 | SI4904DY-T1-E3 |
| Description | MOSFET 40V Vds 16V Vgs SO-8 | MOSFET 40V Vds 16V Vgs SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.75 mm | - |
| Length | 4.9 mm | - |
| Series | SI4 | SI4 |
| Width | 3.9 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SI4904DY-GE3 | SI4904DY-E3 |
| Unit Weight | 0.006596 oz | 0.006596 oz |
| Number of Channels | - | 2 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 40 V |
| Id Continuous Drain Current | - | 8 A |
| Rds On Drain Source Resistance | - | 16 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 800 mV |
| Vgs Gate Source Voltage | - | 16 V |
| Qg Gate Charge | - | 85 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 3.25 W |
| Configuration | - | Dual |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 2 N-Channel |
| Forward Transconductance Min | - | 23 S |
| Fall Time | - | 19 ns |
| Rise Time | - | 117 ns |
| Typical Turn Off Delay Time | - | 62 ns |
| Typical Turn On Delay Time | - | 88 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4904DY-T1-GE3 | MOSFET 40V Vds 16V Vgs SO-8 | |
| SI4904DY-T1-E3 | MOSFET 40V Vds 16V Vgs SO-8 | ||
Vishay |
SI4904DY-T1-GE3 | MOSFET 2N-CH 40V 8A 8-SOIC | |
| SI4904DY-T1-E3 | MOSFET 2N-CH 40V 8A 8-SOIC | ||
| SI4904-GL | New and Original | ||
| SI4904DY | New and Original |