 | | |
| PartNumber | SI4943CDY-T1-E3 | SI4943CDY-T1-GE3 |
| Description | MOSFET -20V Vds 20V Vgs SO-8 | MOSFET -20V Vds 20V Vgs SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 2 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 8 A | - |
| Rds On Drain Source Resistance | 19.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 62 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 3.1 W | - |
| Configuration | Dual | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI4 | SI4 |
| Transistor Type | 2 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 19 S | - |
| Fall Time | 15 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 71 ns | - |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | - |
| Typical Turn On Delay Time | 50 ns | - |
| Part # Aliases | SI4943CDY-E3 | SI4943CDY-GE3 |
| Unit Weight | 0.006596 oz | 0.006596 oz |
| Height | - | 1.75 mm |
| Length | - | 4.9 mm |
| Width | - | 3.9 mm |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4943CDY-T1-E3 | MOSFET -20V Vds 20V Vgs SO-8 | |
| SI4943CDY-T1-GE3 | MOSFET -20V Vds 20V Vgs SO-8 | ||
Vishay |
SI4943CDY-T1-E3 | RF Bipolar Transistors MOSFET 20V 8.0A 3.1W 19.2mohm @ 10V | |
| SI4943CDY-T1-GE3 | MOSFET 2P-CH 20V 8A 8-SOIC | ||
| SI4943CDY-T1-E3-S | New and Original | ||
| SI4943CDY-T1-GE3-S | New and Original |