 |  | | |
| PartNumber | SI4946BEY-T1-E3 | SI4946BEY-T1-E | SI4946BEY-T1-E3 GE3 |
| Description | MOSFET 60V 6.5A 3.7W | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 6.5 A | - | - |
| Rds On Drain Source Resistance | 41 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 25 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3.7 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | SI4 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 24 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SI4946BEY-E3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4946BEY-T1-E3 | MOSFET 60V 6.5A 3.7W | |
| SI4946BEY-T1-E3-CUT TAPE | New and Original | ||
| SI4946BEY-T1-E | New and Original | ||
| SI4946BEY-T1-E3 GE3 | New and Original | ||
Vishay |
SI4946BEY-T1-E3 | MOSFET 2N-CH 60V 6.5A 8-SOIC |