PartNumber | SI7101DN-T1-GE3 | SI7102DN-T1-E3 | SI7102DN-T1-GE3 |
Description | MOSFET -30V Vds 25V Vgs PowerPAK 1212-8 | MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 35 A | - | - |
Rds On Drain Source Resistance | 7.2 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 68 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 52 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | 1.04 mm | 1.04 mm |
Length | 3.3 mm | 3.3 mm | 3.3 mm |
Series | SI7 | SI7 | SI7 |
Transistor Type | 1 P-Channel | - | - |
Width | 3.3 mm | 3.3 mm | 3.3 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 44 S | - | - |
Fall Time | 8 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 38 ns | - | - |
Typical Turn On Delay Time | 12 ns | - | - |
Part # Aliases | - | SI7102DN-E3 | SI7102DN-GE3 |