SI7106DN-T1-GE3

Mfr. #:: SI7106DN-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
Lifecycle:: New from this manufacturer.
Datasheet:: SI7106DN-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI7106DN-T1-GE3 Datasheet SI7106DN-T1-GE3 Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-1212-8

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.04 mm

Length:: 3.3 mm

Series:: SI7

Width:: 3.3 mm

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SI7106DN-GE3

Tags: SI7106DN-T1, SI7106DN-T, SI7106D, SI7106, SI710, SI71, SI7

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7106DN-T1-GE3 Description

***ure Electronics: SI7106DN Series N-Channel 20 V 0.0062 Ohm Power MosFet SMT - POWERPAK-1212-8

*** Source Electronics: Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R / MOSFET N-CH 20V 12.5A 1212-8

***ment14 APAC: MOSFET, N, PPAK1212; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Rise Time:12ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th Min:0.6V

***ure Electronics: N-Channel 20 V 3.8 W 4.9 mohm SMT Fast Switching Mosfet - PowerPAK 1212-8

***ical: Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R

***enic: 20V 14A 4.9m´Î@10V22A 1.5W 2V@250Ã×A N Channel PowerPAK-1212-8 MOSFETs ROHS

***ment14 APAC: N CHANNEL MOSFET, 20V, 22A POWERPAK

***S: French Electronic Distributor since 1988

***nell: MOSFET, N CH, 20V, 14A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-

***ure Electronics: Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8

***ical: Trans MOSFET N-CH 20V 13.5A 8-Pin PowerPAK 1212 T/R

***enic: 20V 13.5A 1.5W 5.3m´Î@10V21.1A 2.5V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS

***(Formerly Allied Electronics): MOSFET; N-Channel 20-V (D-S) Fast Switching

***icontronic: Power Field-Effect Transistor, 13.5A I(D), 20V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***eco: N-CH POWERPAK 1212-8 BWL 20V 5.3MOHM @ 10V

***ser: N-Channel MOSFETs 20V 21.1A 0.0053Ohm

***ment14 APAC: N CH MOSFET, 21.1V, 20A, POWERPAK

***S: French Electronic Distributor since 1988

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:21.1V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):10ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8

***ical: Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R

***ser: N-Channel MOSFETs 20V 22A 0.0049Ohm

***S: French Electronic Distributor since 1988

*** Electronics: XSTRNMOS SMT20V14A4.1MOHMSMT-NOPBP

***ment14 APAC: N CHANNEL MOSFET, 20V, 22A POWERPAK; Tra; N CHANNEL MOSFET, 20V, 22A POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V

***eco: Transistor MOSFET N Channel 20 Volt 16 Amp 8-Pin SOIC

***ure Electronics: Single N-Channel 20 V 0.0065 Ohm 41 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 20V 16A 8-Pin SOIC T/R / MOSFET N-CH 20V 16A 8-SOIC

*** Stop Electro: Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: N Channel Mosfet, 20V, 16A; Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.02Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:12V; Product Range:-Rohs Compliant: Yes

***Yang: Transistor MOSFET Array Dual N-CH 20V 58A 6-Pin DirectFET SA T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 4.9 mOhm 54 nC HEXFET® Power Mosfet - DirectFET®

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET; Low Profile (less than 0.7 mm); Dual Sided Cooling | Target Applications: Battery Protection

Market price

Part #	Mfg.	Description	Stock	Price
SI7106DN-T1-GE3 DISTI # V72:2272_09215606	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	1477	1000:$0.9344 500:$0.9910 250:$1.0476 100:$1.1043 25:$1.1609 10:$1.1837 1:$1.4576
SI7106DN-T1-GE3 DISTI # V36:1790_09215606	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0	3000:$0.9545
SI7106DN-T1-GE3 DISTI # SI7106DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3417In Stock	1000:$0.6038 500:$0.7648 100:$0.9258 10:$1.1870 1:$1.3300
SI7106DN-T1-GE3 DISTI # SI7106DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3417In Stock	1000:$0.6038 500:$0.7648 100:$0.9258 10:$1.1870 1:$1.3300
SI7106DN-T1-GE3 DISTI # SI7106DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.5002 6000:$0.5198 3000:$0.5471
SI7106DN-T1-GE3 DISTI # 25789862	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	1477	8:$1.4576
SI7106DN-T1-GE3 DISTI # SI7106DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R (Alt: SI7106DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 3000	150000:$1.0804 75000:$1.1137 30000:$1.1490 15000:$1.2481 9000:$1.4773 6000:$1.8561 3000:$2.4130
SI7106DN-T1-GE3 DISTI # SI7106DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7106DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.8969 18000:$0.9219 12000:$0.9479 6000:$0.9879 3000:$1.0179
SI7106DN-T1-GE3 DISTI # 33P5373	Vishay Intertechnologies	N CH MOSFET,Continuous Drain Current Id:19.5A,Drain Source Voltage Vds:20V,No. of Pins:8,On Resistance Rds(on):6.2mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-PowerPAK 1212,Power Dissipation Pd:3.8W RoHS Compliant: Yes	0	10000:$0.8750 6000:$0.9100 4000:$0.9450 2000:$1.0500 1000:$1.1100 1:$1.1800
SI7106DN-T1-GE3 DISTI # 12R3254	Vishay Intertechnologies	N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:19.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:3.8W RoHS Compliant: Yes	0	1000:$0.8960 500:$1.0800 250:$1.1600 100:$1.2400 50:$1.4200 25:$1.6000 1:$1.9200
SI7106DN-T1-GE3 DISTI # 781-SI7106DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	5878	1:$1.9000 10:$1.5800 100:$1.2300 500:$1.0700 1000:$0.8870
SI7106DN-T1-GE3	Vishay Intertechnologies		7127

Related products

Image	Part #	Description
	Mfr.#: SI7106DN-T1-GE3 OMO.#: OMO-SI7106DN-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7106DN-T1-E3 OMO.#: OMO-SI7106DN-T1-E3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7106DN-T1-E3-CUT TAPE OMO.#: OMO-SI7106DN-T1-E3-CUT-TAPE-1190	New and Original
	Mfr.#: SI7106DN OMO.#: OMO-SI7106DN-1190	New and Original
	Mfr.#: SI7106DN-T1-GE3 OMO.#: OMO-SI7106DN-T1-GE3-VISHAY	MOSFET N-CH 20V 12.5A 1212-8
	Mfr.#: SI7106DN-TI-E3 OMO.#: OMO-SI7106DN-TI-E3-1190	New and Original
	Mfr.#: SI7106DNT1E3 OMO.#: OMO-SI7106DNT1E3-1190	Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: SI7106DN-T1-E3 OMO.#: OMO-SI7106DN-T1-E3-VISHAY	MOSFET N-CH 20V 12.5A 1212-8

Availability

Stock:: Available
On Order:: 1988
Enter Quantity:

Current price of SI7106DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.90~~; ~~$1.90~~

10: ~~$1.58~~; ~~$15.80~~

100: ~~$1.23~~; ~~$123.00~~

500: ~~$1.07~~; ~~$535.00~~

1000: ~~$0.89~~; ~~$887.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SI7106DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes