SI7119

SI7119DN-T1-GE3 vs SI7119DN-T1-E3 vs SI7119DN

 
PartNumberSI7119DN-T1-GE3SI7119DN-T1-E3SI7119DN
DescriptionMOSFET -200V Vds 20V Vgs PowerPAK 1212-8MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-1212-8PowerPAK-1212-8-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current3.8 A--
Rds On Drain Source Resistance1.05 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge16.2 nC--
Minimum Operating Temperature- 50 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation52 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm1.04 mm-
Length3.3 mm3.3 mm-
SeriesSI7SI7-
Transistor Type1 P-Channel--
Width3.3 mm3.3 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min4 S--
Fall Time12 ns--
Product TypeMOSFETMOSFET-
Rise Time11 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesSI7119DN-GE3SI7119DN-E3-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
SI7119DN-T1-E3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
SI7119DN-T1-GE3-CUT TAPE New and Original
SI7119DN New and Original
SI7119DN-T1-GE3-D New and Original
Vishay
Vishay
SI7119DN-T1-E3 MOSFET P-CH 200V 3.8A 1212-8
SI7119DN-T1-GE3 MOSFET P-CH 200V 3.8A 1212-8
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