SI7904BDN-T

SI7904BDN-T1-GE3 vs SI7904BDN-T1-E3-CUT TAPE vs SI7904BDN-T1-E3

 
PartNumberSI7904BDN-T1-GE3SI7904BDN-T1-E3-CUT TAPESI7904BDN-T1-E3
DescriptionMOSFET 20V Vds 8V Vgs PowerPAK 1212-8MOSFET 2N-CH 20V 6A 1212-8
ManufacturerVishay-Vishay Siliconix
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerPAK-1212-8--
TradenameTrenchFET--
PackagingReel-Digi-ReelR Alternate Packaging
Height1.04 mm--
Length3.3 mm--
SeriesSI7-TrenchFETR
Width3.3 mm--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSI7904BDN-GE3--
Part Aliases--SI7904BDN-E3
Package Case--PowerPAKR 1212-8 Dual
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--2 Channel
Supplier Device Package--PowerPAKR 1212-8 Dual
Configuration--Dual
FET Type--2 N-Channel (Dual)
Power Max--17.8W
Transistor Type--2 N-Channel
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--860pF @ 10V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--6A
Rds On Max Id Vgs--30 mOhm @ 7.1A, 4.5V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--24nC @ 8V
Pd Power Dissipation--2.5 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--6 ns 5 ns
Rise Time--60 ns 15 ns
Vgs Gate Source Voltage--8 V
Id Continuous Drain Current--6 A
Vds Drain Source Breakdown Voltage--20 V
Rds On Drain Source Resistance--30 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--25 ns
Typical Turn On Delay Time--7 ns 5 ns
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7904BDN-T1-GE3 MOSFET 20V Vds 8V Vgs PowerPAK 1212-8
SI7904BDN-T1-E3-CUT TAPE New and Original
SI7904BDN-TI New and Original
Vishay
Vishay
SI7904BDN-T1-E3 MOSFET 2N-CH 20V 6A 1212-8
SI7904BDN-T1-GE3 MOSFET 2N-CH 20V 6A PPAK 1212-8
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