SI790

SI7900AEDN-T1-E3 vs SI7900AEDN-T1-GE3 vs SI7901EDN-T1-GE3

 
PartNumberSI7900AEDN-T1-E3SI7900AEDN-T1-GE3SI7901EDN-T1-GE3
DescriptionMOSFET 20V Vds 12V Vgs PowerPAK 1212-8MOSFET 20V Vds 12V Vgs PowerPAK 1212-8MOSFET RECOMMENDED ALT 781-SI7913DN-T1-GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8PowerPAK-1212-8PowerPAK-1212-8
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current8.5 A8.5 A-
Rds On Drain Source Resistance26 mOhms26 mOhms-
Vgs th Gate Source Threshold Voltage400 mV400 mV-
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge16 nC16 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3.1 W3.1 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSI7SI7SI7
Transistor Type2 N-Channel2 N-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min25 S25 S-
Fall Time4.2 ns4.2 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time1.3 ns1.3 ns-
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time8.6 ns8.6 ns-
Typical Turn On Delay Time0.85 ns0.85 ns-
Part # AliasesSI7900AEDN-T1SI7900AEDN-GE3SI7901EDN-GE3
Height--1.04 mm
Length--3.3 mm
Width--3.3 mm
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7900AEDN-T1-E3 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
SI7900AEDN-T1-GE3 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
SI7904DN-T1-E3 MOSFET RECOMMENDED ALT 781-SI7904BDN-T1-GE3
SI7904DN-T1-GE3 MOSFET RECOMMENDED ALT 781-SI7904BDN-T1-GE3
SI7901EDN-T1-GE3 MOSFET RECOMMENDED ALT 781-SI7913DN-T1-GE3
SI7904BDN-T1-GE3 MOSFET 20V Vds 8V Vgs PowerPAK 1212-8
SI7909DN-T1-E3 MOSFET RECOMMENDED ALT 781-SI7913DN-T1-GE3
Vishay
Vishay
SI7905DN-T1-E3 RF Bipolar Transistors MOSFET 40V 6.0A 20.8W 60mohm @ 10V
SI7900AEDN-T1-E3 RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
SI7900AEDN-T1-GE3 RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
SI7901EDN-T1-E3 MOSFET 2P-CH 20V 4.3A 1212-8
SI7901EDN-T1-GE3 MOSFET 2P-CH 20V 4.3A 1212-8
SI7904BDN-T1-E3 MOSFET 2N-CH 20V 6A 1212-8
SI7904BDN-T1-GE3 MOSFET 2N-CH 20V 6A PPAK 1212-8
SI7904DN-T1-E3 MOSFET 2N-CH 20V 5.3A 1212-8
SI7904DN-T1-GE3 MOSFET 2N-CH 20V 5.3A 1212-8
SI7905DN-T1-GE3 MOSFET 2P-CH 40V 6A PPAK 1212-8
SI7904BDN-T1-E3-CUT TAPE New and Original
SI7905DN-T1-GE3-CUT TAPE New and Original
SI7900 New and Original
SI7900A New and Original
SI7900ADN New and Original
SI7900ADN-T1-E3 New and Original
SI7900AEDN New and Original
SI7900AEDN-T New and Original
SI7900AEDN-T1 New and Original
SI7900AEDN-T1-E3 GE3 New and Original
SI7900DN New and Original
SI7900DN-T1-E3 New and Original
SI7900EDN New and Original
SI7900EDN-T1 New and Original
SI7900EDN-T1-E3 New and Original
SI7900EDN-T1-GE3 New and Original
SI7900EDQ New and Original
SI7901 New and Original
SI7901DN-T1 New and Original
SI7901EDN New and Original
SI7901EDN-T1 TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,4.3A I(D),LLCC
SI7901EDNT1 New and Original
SI7904 New and Original
SI7904B-G E3 New and Original
SI7904BDN-TI New and Original
SI7904BDNT1E3 Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SI7904DN New and Original
SI7904DN-T1 New and Original
SI7904DN-T1-E3CT-ND New and Original
SI7904DN-TI-E3 New and Original
SI7904DP-T1-E3 New and Original
SI7904DY New and Original
SI7909DN-T1 New and Original
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