SI7900AEDN-T1-E3

Mfr. #:: SI7900AEDN-T1-E3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
Lifecycle:: New from this manufacturer.
Datasheet:: SI7900AEDN-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SI7900AEDN-T1-E3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-1212-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 8.5 A

Rds On - Drain-Source Resistance:: 26 mOhms

Vgs th - Gate-Source Threshold Voltage:: 400 mV

Vgs - Gate-Source Voltage:: 12 V

Qg - Gate Charge:: 16 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 3.1 W

Configuration:: Dual

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Reel

Series:: SI7

Transistor Type:: 2 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 25 S

Fall Time:: 4.2 ns

Product Type:: MOSFET

Rise Time:: 1.3 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 8.6 ns

Typical Turn-On Delay Time:: 0.85 ns

Part # Aliases:: SI7900AEDN-T1

Tags: SI7900AEDN-T1, SI7900AEDN-T, SI7900AE, SI7900A, SI7900, SI790, SI79, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7900AEDN-T1-E3 Ratings and Reviews

J***y

This is the second time to buy these HV fast diodes. They are quite sturdy and take a lot of HV abuse before they release the magic smoke. Exceptionally good for Cockroft Walton voltage multipliers. Again, they take a lot of abuse before dying.

2019-03-02

E***v

Delivery, a month with a small to the vladimir region. Give 40 kohm, instead of the claimed 50.

2019-04-13

SI7900AEDN-T1-E3 Description

***et: Transistor MOSFET Array Dual N-Channel 20V 6A 8-Pin PowerPAK 1212 T/R

***ure Electronics: 20V 30A 0.026 Ohm Dual N-ch PowerPak 3.3x3.3 8L

***ark: Transistor; Continuous Drain Current, Id:8500mA; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.036ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:0.9V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

SI7900AEDN-T1-E3 More Information

Integrated MOSFETs with Common Drain: Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Part #	Mfg.	Description	Stock	Price
SI7900AEDN-T1-E3 DISTI # V72:2272_09216403	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.6550 1000:$0.6936 500:$0.8372 250:$0.9543 100:$0.9570 25:$1.1724 10:$1.1774 1:$1.3583
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	47547In Stock	1000:$0.8050 500:$0.9715 100:$1.2491 10:$1.5540 1:$1.7200
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	47547In Stock	1000:$0.8050 500:$0.9715 100:$1.2491 10:$1.5540 1:$1.7200
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	42000In Stock	3000:$0.7546
SI7900AEDN-T1-E3 DISTI # 25790064	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.6550 1000:$0.6936 500:$0.8372 250:$0.9543 100:$0.9570 25:$1.1724 11:$1.1774
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7900AEDN-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7129 6000:$0.6919 12000:$0.6629 18000:$0.6449 30000:$0.6279
SI7900AEDN-T1-E3 DISTI # 06J8175	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 20V POWERPAK, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):36mohm,Rds(on) Test Voltage Vgs:12V,Power Dissipation Pd:1.5W, RoHS Compliant: Yes	0	1:$0.5600 3000:$0.5560 6000:$0.5290 12000:$0.4690
SI7900AEDN-T1-E3 DISTI # 09X6454	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 6A, POWERPAK-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes	0	1:$1.1000 10:$1.0600 100:$0.8350 250:$0.7940 500:$0.7410 1000:$0.5940
SI7900AEDN-T1-E3 DISTI # 781-SI7900AEDN-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	2994	1:$1.7200 10:$1.4200 100:$1.0900 500:$0.9320 1000:$0.7350 3000:$0.6860
SI7900AEDN-T1-E3	Vishay Siliconix	6 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET	2905	1456:$0.4840 326:$0.5500 1:$1.7600
SI7900AEDN-T1-E3 DISTI # C1S803601003759	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	250:$0.9543 100:$0.9570 25:$1.1724 10:$1.1774
SI7900AEDN-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8	Americas -

Related products

Image	Part #	Description
	Mfr.#: MCP73812T-420I/OT OMO.#: OMO-MCP73812T-420I-OT	Battery Management Simple Integr Li-Ion /Li-Poly Chrg
	Mfr.#: ATMEGA328P-MN OMO.#: OMO-ATMEGA328P-MN	8-bit Microcontrollers - MCU AVR 32K FLSH 2K SRAM 1KB EE-20 MHZ 105C
	Mfr.#: LDS3985M33R OMO.#: OMO-LDS3985M33R	LDO Voltage Regulators 3.3 Volt 300mA
	Mfr.#: CGB3B3X6S1A105M055AB OMO.#: OMO-CGB3B3X6S1A105M055AB	Multilayer Ceramic Capacitors MLCC - SMD/SMT CGB 0603 10V 1uF X6S 20% T: 0.55mm
	Mfr.#: RC0402JR-0710KL OMO.#: OMO-RC0402JR-0710KL	Thick Film Resistors - SMD 10K OHM 5%
	Mfr.#: MCP73812T-420I/OT OMO.#: OMO-MCP73812T-420I-OT-MICROCHIP-TECHNOLOGY	Battery Management Simple Integr Li-Ion /Li-Poly Chrg
	Mfr.#: LDS3985M33R OMO.#: OMO-LDS3985M33R-STMICROELECTRONICS	IC REG LINEAR 3.3V 300MA SOT23-5
	Mfr.#: ATMEGA328P-MN OMO.#: OMO-ATMEGA328P-MN-MICROCHIP-TECHNOLOGY	Microcontrollers - MCU 8-bit Microcontrollers - MCU AVR 32K FLSH 2K SRAM 1KB EE-20 MHZ 105C
	Mfr.#: MCS04020C2209FE000 OMO.#: OMO-MCS04020C2209FE000-VISHAY	Thin Film Resistors - SMD .063W 22ohms 1% 0402 50ppm
	Mfr.#: ABM3B-8.000MHZ-B2-T OMO.#: OMO-ABM3B-8-000MHZ-B2-T-ABRACON	Crystals 8.0MHz 18pf 20ppm -20C +70C

Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of SI7900AEDN-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.72~~; ~~$1.72~~

10: ~~$1.42~~; ~~$14.20~~

100: ~~$1.09~~; ~~$109.00~~

500: ~~$0.93~~; ~~$466.00~~

1000: ~~$0.74~~; ~~$735.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

Newest Products

SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
Compare SI7900AEDN-T1-E3

SI7900AEDNT1 vs SI7900AEDNT1E3 vs SI7900AEDNT1E3GE3
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.

More Newest Products

SI7900AEDN-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

J***y

E***v

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes