SI7900AEDN-T1-GE3

Mfr. #:: SI7900AEDN-T1-GE3
Manufacturer:: Vishay
Description:: RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
Lifecycle:: New from this manufacturer.
Datasheet:: SI7900AEDN-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SI7900AEDN-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SI7900AEDN-GE3

Mounting-Style: SMD/SMT

Tradename: TrenchFET/PowerPAK

Package-Case: PowerPAKR 1212-8 Dual

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: PowerPAKR 1212-8 Dual

Configuration: Dual

FET-Type: 2 N-Channel (Dual) Common Drain

Power-Max: 1.5W

Transistor-Type: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 20V

Input-Capacitance-Ciss-Vds: -

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 6A

Rds-On-Max-Id-Vgs: 26 mOhm @ 8.5A, 4.5V

Vgs-th-Max-Id: 900mV @ 250μA

Gate-Charge-Qg-Vgs: 16nC @ 4.5V

Pd-Power-Dissipation: 1.5 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 1300 ns

Rise-Time: 1300 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuous-Drain-Current: 6 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Resistance: 26 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 8600 ns

Typical-Turn-On-Delay-Time: 850 ns

Channel-Mode: Enhancement

Tags: SI7900AEDN-T1, SI7900AEDN-T, SI7900AE, SI7900A, SI7900, SI790, SI79, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7900AEDN-T1-GE3 Description

***ied Electronics & Automation: SI7900AEDN-T1-GE3 Dual N-channel MOSFET Transistor; 6 A; 20V; 8-Pin PowerPAK 1212

***Components: In a Pack of 10, Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7900AEDN-T1-GE3

***ical: Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET 2N-CH 20V 6A PPAK 1212-8

SI7900AEDN-T1-GE3 More Information

Integrated MOSFETs with Common Drain: Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Part #	Mfg.	Description	Stock	Price
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5236
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7900AEDN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4939 6000:$0.4799 12000:$0.4599 18000:$0.4469 30000:$0.4349
SI7900AEDN-T1-GE3 DISTI # 70617004	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant	0	300:$0.8200 600:$0.7500 1500:$0.6900 3000:$0.6100
SI7900AEDN-T1-GE3 DISTI # 781-SI7900AEDN-GE3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	2990	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5100 3000:$0.4760
SI7900AEDN-T1-GE3	Vishay Intertechnologies		960

Related products

Image	Part #	Description
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
	Mfr.#: SI7900AEDN OMO.#: OMO-SI7900AEDN-1190	New and Original
	Mfr.#: SI7900AEDN-T OMO.#: OMO-SI7900AEDN-T-1190	New and Original
	Mfr.#: SI7900AEDN-T1 OMO.#: OMO-SI7900AEDN-T1-1190	New and Original
	Mfr.#: SI7900AEDN-T1-E3 GE3 OMO.#: OMO-SI7900AEDN-T1-E3-GE3-1190	New and Original

Availability

Stock:: Available
On Order:: 3000
Enter Quantity:

Current price of SI7900AEDN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.65~~; ~~$0.65~~

10: ~~$0.62~~; ~~$6.20~~

100: ~~$0.59~~; ~~$58.71~~

500: ~~$0.55~~; ~~$277.25~~

1000: ~~$0.52~~; ~~$521.90~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SI7900AEDN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes