PartNumber | SI7905DN-T1-E3 | SI7905DN-T1-GE3-CUT TAPE | SI7905DN-T1-GE3 |
Description | RF Bipolar Transistors MOSFET 40V 6.0A 20.8W 60mohm @ 10V | MOSFET 2P-CH 40V 6A PPAK 1212-8 | |
Manufacturer | Vishay Siliconix | - | - |
Product Category | FETs - Arrays | - | - |
Series | TrenchFETR | - | - |
Packaging | Tape & Reel (TR) | - | - |
Part Aliases | SI7905DN-E3 | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | PowerPAKR 1212-8 Dual | - | - |
Technology | Si | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Number of Channels | 2 Channel | - | - |
Supplier Device Package | PowerPAKR 1212-8 Dual | - | - |
Configuration | Dual | - | - |
FET Type | 2 P-Channel (Dual) | - | - |
Power Max | 20.8W | - | - |
Transistor Type | 2 P-Channel | - | - |
Drain to Source Voltage Vdss | 40V | - | - |
Input Capacitance Ciss Vds | 880pF @ 20V | - | - |
FET Feature | Standard | - | - |
Current Continuous Drain Id 25°C | 6A | - | - |
Rds On Max Id Vgs | 60 mOhm @ 5A, 10V | - | - |
Vgs th Max Id | 3V @ 250μA | - | - |
Gate Charge Qg Vgs | 30nC @ 10V | - | - |
Pd Power Dissipation | 2.5 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 50 C | - | - |
Fall Time | 11 ns 10 ns | - | - |
Rise Time | 100 ns 13 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 5 A | - | - |
Vds Drain Source Breakdown Voltage | - 40 V | - | - |
Rds On Drain Source Resistance | 60 mOhms | - | - |
Transistor Polarity | P-Channel | - | - |
Typical Turn Off Delay Time | 24 ns 26 ns | - | - |
Typical Turn On Delay Time | 42 ns 6 ns | - | - |
Channel Mode | Enhancement | - | - |