PartNumber | SI8800EDB-T2-E1 | SI8802DB-T2-E1 | SI8805EDB-T2-E1 |
Description | MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 | MOSFET RECOMMENDED ALT 78-SI8823EDB-T2-E1 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SI8 | SI8 | SI8 |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | MicroFoot-4 | MicroFoot-4 |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 8 V | - |
Id Continuous Drain Current | - | 3.5 A | - |
Rds On Drain Source Resistance | - | 54 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 350 mV | - |
Vgs Gate Source Voltage | - | 4.5 V | - |
Qg Gate Charge | - | 4.3 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 0.9 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Height | - | 0.65 mm | 0.65 mm |
Length | - | 1.6 mm | 1.6 mm |
Transistor Type | - | 1 N-Channel | - |
Width | - | 1.6 mm | 1.6 mm |
Forward Transconductance Min | - | 13 S | - |
Fall Time | - | 7 ns | - |
Rise Time | - | 15 ns | - |
Typical Turn Off Delay Time | - | 22 ns | - |
Typical Turn On Delay Time | - | 5 ns | - |