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| PartNumber | SI8802DB-T2-E1 | SI8802DB-T2-E1-CUT TAPE | SI8802DB-T2-EY |
| Description | MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | MicroFoot-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 8 V | - | - |
| Id Continuous Drain Current | 3.5 A | - | - |
| Rds On Drain Source Resistance | 54 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 350 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 4.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 0.9 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 0.65 mm | - | - |
| Length | 1.6 mm | - | - |
| Series | SI8 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 1.6 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 13 S | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns | - | - |
| Typical Turn On Delay Time | 5 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI8802DB-T2-E1 | MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 | |
| SI8802DB-T2-E1-CUT TAPE | New and Original | ||
| SI8802DB-T2-EY | New and Original | ||
| SI8802DBT2E1 | Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Vishay |
SI8802DB-T2-E1 | MOSFET N-CH 8V MICROFOOT |