PartNumber | SI9926CDY-T1-E3 | SI9926CDY-T1-GE3 | SI9926BDY-T1-E3 |
Description | MOSFET 20V Vds 12V Vgs SO-8 | MOSFET 20V Vds 12V Vgs SO-8 | MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 8 A | 8 A | - |
Rds On Drain Source Resistance | 18 mOhms | 18 mOhms | - |
Vgs th Gate Source Threshold Voltage | 600 mV | 600 mV | - |
Vgs Gate Source Voltage | 4.5 V | 4.5 V | - |
Qg Gate Charge | 22 nC | 22 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 3.1 W | 3.1 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Series | SI9 | SI9 | SI9 |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Width | 3.9 mm | 3.9 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 45 S | 45 S | - |
Fall Time | 12 ns | 12 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 10 ns | - |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 35 ns | 35 ns | - |
Typical Turn On Delay Time | 15 ns | 15 ns | - |
Part # Aliases | SI9926CDY-E3 | SI9926CDY-GE3 | SI9926BDY-E3 |
Unit Weight | 0.006596 oz | 0.006596 oz | 0.017870 oz |