 | | | |
| PartNumber | SIHB33N60EF-GE3 | SIHB33N60ET1-GE3 | SIHB33N60E-GE3 |
| Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET N-Channel 600V | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Packaging | Bulk | Reel | Tube |
| Series | EF | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 800 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.068654 oz | 0.050717 oz | 0.050717 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | TO-263-3 | TO-263-3 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 600 V | 600 V |
| Id Continuous Drain Current | - | 33 A | 33 A |
| Rds On Drain Source Resistance | - | 98 mOhms | 99 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 4 V | 4 V |
| Vgs Gate Source Voltage | - | 30 V | 30 V |
| Qg Gate Charge | - | 103 nC | 100 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 278 W | 278 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 4.83 mm | 4.83 mm |
| Length | - | 10.67 mm | 10.67 mm |
| Width | - | 9.65 mm | 9.65 mm |
| Fall Time | - | 48 ns | 54 ns |
| Rise Time | - | 43 ns | 60 ns |
| Typical Turn Off Delay Time | - | 161 ns | 99 ns |
| Typical Turn On Delay Time | - | 28 ns | 28 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHB35N60EF-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
| SIHB4N80E-GE3 | MOSFET 800V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB33N60EF-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB33N60ET1-GE3 | MOSFET N-Channel 600V | ||
| SIHB33N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB8N50D-GE3 | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB33N60ET5-GE3 | MOSFET 600V Vds E Series D2PAK TO-263 | ||
Vishay |
SIHB6N65E-GE3 | IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS | |
| SIHB8N50D-GE3 | IGBT Transistors MOSFET 500V 850mOhms@10V 8.7A N-Ch D-SRS | ||
| SIHB33N60EF-GE3 | IGBT Transistors MOSFET N-Channel 600V | ||
| SIHB33N60ET1-GE3 | RF Bipolar Transistors MOSFET N-Channel 600V | ||
| SIHB33N60E-GE3 | MOSFET N-CH 600V 33A TO-263 | ||
| SIHB33N60ET5-GE3 | MOSFET N-CH 600V 33A TO263 | ||
| SIHB35N60E-GE3 | MOSFET N-CH 600V 32A D2PAK TO263 | ||
| SIHB35N60EF-GE3 | EF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V | ||
| SIHB33N60E-E3 | RF Bipolar Transistors MOSFET N-Channel 600V | ||
| SIHB33N60EF-GE3-CUT TAPE | New and Original | ||
| SIHB6N65ET1-GE3 | New and Original | ||
| SIHB8N50D | New and Original |