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SIHB33N60ET1-GE3

SIHB33N60ET1-GE3
Mfr. #:
SIHB33N60ET1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-Channel 600V
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB33N60ET1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB33N60ET1-GE3 DatasheetSIHB33N60ET1-GE3 Datasheet (P4-P6)SIHB33N60ET1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SIHB33N60ET1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
33 A
Rds On - Drain-Source Resistance:
98 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
103 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
278 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
4.83 mm
Length:
10.67 mm
Series:
E
Width:
9.65 mm
Brand:
Vishay / Siliconix
Fall Time:
48 ns
Product Type:
MOSFET
Rise Time:
43 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
161 ns
Typical Turn-On Delay Time:
28 ns
Unit Weight:
0.050717 oz
Tags
SIHB33, SIHB3, SIHB, SIH
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 33A TO263
***et
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHB33N60ET1-GE3
DISTI # SIHB33N60ET1-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO263
RoHS: Not compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$3.6630
SIHB33N60ET1-GE3
DISTI # SIHB33N60ET1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK T/R - Bulk (Alt: SIHB33N60ET1-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Bulk		Americas - 0
  • 800:$3.1900
  • 1600:$3.0900
  • 3200:$2.9900
  • 4800:$2.8900
  • 8000:$2.7900
SIHB33N60ET1-GE3
DISTI # 78-SIHB33N60ET1-GE3		Vishay IntertechnologiesMOSFET N-Channel 600V
RoHS: Compliant		0
  • 1:$6.2200
  • 10:$5.1600
  • 100:$4.2400
  • 250:$4.1100
  • 500:$3.6900
  • 800:$3.1100
  • 2400:$2.9600
Image Part # Description
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3

 MOSFET N-Channel 600V
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3

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SIHB33N60ET5-GE3

Mfr.#: SIHB33N60ET5-GE3

OMO.#: OMO-SIHB33N60ET5-GE3

 MOSFET 600V Vds E Series D2PAK TO-263
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3-VISHAY

 IGBT Transistors MOSFET N-Channel 600V
SIHB33N60E-E3

Mfr.#: SIHB33N60E-E3

OMO.#: OMO-SIHB33N60E-E3-317

 RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3-VISHAY

 RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60EF-GE3-CUT TAPE

Mfr.#: SIHB33N60EF-GE3-CUT TAPE

OMO.#: OMO-SIHB33N60EF-GE3-CUT-TAPE-1190

 New and Original
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3-VISHAY

 MOSFET N-CH 600V 33A TO-263
SIHB33N60ET5-GE3

Mfr.#: SIHB33N60ET5-GE3

OMO.#: OMO-SIHB33N60ET5-GE3-VISHAY

 MOSFET N-CH 600V 33A TO263
Availability
Stock:
800
On Order:
2783
Enter Quantity:
Current price of SIHB33N60ET1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.21
$6.21
10
$5.15
$51.50
100
$4.23
$423.00
250
$4.10
$1 025.00
500
$3.68
$1 840.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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