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| PartNumber | SIHD3N50DT4-GE3 | SIHD3N50DT1-GE3 | SIHD3N50DT5-GE3 |
| Description | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | MOSFET 500V Vds 30V Vgs DPAK (TO-252) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
| Id Continuous Drain Current | 3 A | 3 A | 3 A |
| Rds On Drain Source Resistance | 3.2 Ohms | 3.2 Ohms | 3.2 Ohms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 12 nC | 12 nC | 12 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 69 W | 69 W | 69 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | D | D | D |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 1 S | 1 S | 1 S |
| Fall Time | 13 ns | 13 ns | 13 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 9 ns | 9 ns |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 11 ns | 11 ns | 11 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns | 12 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHD3N50DT4-GE3 | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | |
| SIHD3N50DT1-GE3 | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | ||
| SIHD3N50DT5-GE3 | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | ||
| SIHD3N50DT1-GE3 | New and Original |