SIHD3N50DT5-GE3

SIHD3N50DT5-GE3
Mfr. #:
SIHD3N50DT5-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 500V Vds 30V Vgs DPAK (TO-252)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHD3N50DT5-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
3 A
Rds On - Drain-Source Resistance:
3.2 Ohms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
12 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
69 W
Configuration:
Single
Channel Mode:
Enhancement
Series:
D
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
1 S
Fall Time:
13 ns
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
1
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
11 ns
Typical Turn-On Delay Time:
12 ns
Tags
SIHD3N50DT, SIHD3, SIHD, SIH
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Image Part # Description
SIHD3N50DT4-GE3

Mfr.#: SIHD3N50DT4-GE3

OMO.#: OMO-SIHD3N50DT4-GE3

MOSFET 500V Vds 30V Vgs DPAK (TO-252)
SIHD3N50D-E3

Mfr.#: SIHD3N50D-E3

OMO.#: OMO-SIHD3N50D-E3

MOSFET 500V Vds 30V Vgs DPAK (TO-252)
SIHD3N50DT1-GE3

Mfr.#: SIHD3N50DT1-GE3

OMO.#: OMO-SIHD3N50DT1-GE3

MOSFET 500V Vds 30V Vgs DPAK (TO-252)
SIHD3N50DT5-GE3

Mfr.#: SIHD3N50DT5-GE3

OMO.#: OMO-SIHD3N50DT5-GE3

MOSFET 500V Vds 30V Vgs DPAK (TO-252)
SIHD3N50D

Mfr.#: SIHD3N50D

OMO.#: OMO-SIHD3N50D-1190

New and Original
SIHD3N50D FQD3N59C

Mfr.#: SIHD3N50D FQD3N59C

OMO.#: OMO-SIHD3N50D-FQD3N59C-1190

New and Original
SIHD3N50D-E3

Mfr.#: SIHD3N50D-E3

OMO.#: OMO-SIHD3N50D-E3-VISHAY

MOSFET N-CH 500V 3A TO252 DPAK
SIHD3N50D-GE3

Mfr.#: SIHD3N50D-GE3

OMO.#: OMO-SIHD3N50D-GE3-VISHAY

MOSFET N-CH 500V 3A TO252 DPAK
SIHD3N50DGE3

Mfr.#: SIHD3N50DGE3

OMO.#: OMO-SIHD3N50DGE3-1190

Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SIHD3N50DT1-GE3

Mfr.#: SIHD3N50DT1-GE3

OMO.#: OMO-SIHD3N50DT1-GE3-1190

New and Original
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of SIHD3N50DT5-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
3000
$0.34
$1 020.00
6000
$0.32
$1 896.00
12000
$0.30
$3 660.00
27000
$0.29
$7 911.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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