PartNumber | SIHF9630STRL-GE3 | SIHF9630S-GE3 | SIHF9630 |
Description | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 6.5 A | 6.5 A | - |
Rds On Drain Source Resistance | 800 mOhms | 800 mOhms | - |
Vgs th Gate Source Threshold Voltage | - 4 V | - 4 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 29 nC | 29 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 74 W | 74 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | - | - |
Series | SIH | SIHF | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 2.8 S | 2.8 S | - |
Fall Time | 24 ns | 24 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 27 ns | 27 ns | - |
Factory Pack Quantity | 800 | 1 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 28 ns | 28 ns | - |
Typical Turn On Delay Time | 12 ns | 12 ns | - |